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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was …