High mobility two-dimensional hole system in GaAs∕AlGaAs quantum wells grown on (100) GaAs substrates
High mobility two-dimensional hole system in GaAs∕AlGaAs quantum wells grown on (100) GaAs substrates
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon utilizing a novel resistive filament source. At T=0.3K and carrier density p=1x10^11cm^-2, a mobility of …