Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations
Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations
In this letter, we explore the band structure effects on the performance of ballistic silicon nanowire transistors (SNWTs). The energy dispersion relations for silicon nanowires are evaluated with an sp3d5s* tight binding model. Based on the calculated dispersion relations, the ballistic currents for both n-type and p-type SNWTs are evaluated …