Transport scattering time probed through rf admittance of a graphene capacitor
Transport scattering time probed through rf admittance of a graphene capacitor
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity, and diffusion constant are deduced from the low-frequency gate capacitance, its charging time, and their …