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Polariton Laser Using Single Micropillar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaAs</mml:mi><mml:mtext mathvariant="normal">โ</mml:mtext><mml:mi>GaAlAs</mml:mi></mml:math>Semiconductor Cavities
Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, โฆ