Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens-shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment, including quantites such as the single-particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole, …