Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide
Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in …