Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods
Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods
A computationally efficient mode space simulation method for atomistic simulation of a graphene nanoribbon field-effect transistor in the ballistic limits is developed. The proposed simulation scheme, which solves the nonequilibrium Green’s function coupled with a three dimensional Poisson equation, is based on the atomistic Hamiltonian in a decoupled mode space. …