Atomistic approach to alloy scattering in Si1−xGex
Atomistic approach to alloy scattering in Si1−xGex
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in …