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Carbon antisite clusters in SiC: A possible pathway to the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">II</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>center

Carbon antisite clusters in SiC: A possible pathway to the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">II</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>center

The photoluminescence center ${D}_{\mathrm{II}}$ is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab initio calculations of vibrational spectra for various defect complexes and find that carbon antisite clusters exhibit vibrational modes in the frequency …