Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions
Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions
We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel …