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Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by …