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Valley splitting theory of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow></mml:math>quantum wells

Valley splitting theory of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow></mml:math>quantum wells

We present an effective mass theory for $\mathrm{Si}\mathrm{Ge}∕\mathrm{Si}∕\mathrm{Si}\mathrm{Ge}$ quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter ${v}_{v}$ which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The …