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Interlayer magnetic-frustration–driven quantum spin disorder in the honeycomb compound In <sub>3</sub> Cu <sub>2</sub> VO <sub>9</sub>

Interlayer magnetic-frustration–driven quantum spin disorder in the honeycomb compound In <sub>3</sub> Cu <sub>2</sub> VO <sub>9</sub>

We present electronic and magnetic properties of a honeycomb compound In$_{3}$Cu$_{2}$VO$_{9}$ in this paper. We find that the parent phase is a charge transfer insulator with an energy gap of about 1.5 eV. Singly occupied d$_{3z^{2}-r^{2}}$ electrons of copper ions contribute an $S$ = 1/2 spin, while vanadium ions show …