Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an …