Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

Jie Zhang, Yun‐Yi Pai, Jason Lapano, Alessandro R. Mazza, Ho Nyung Lee, R. G. Moore, Benjamin J. Lawrie, Thomas Z. Ward, Gyula Eres, Valentino R. Cooper

Abstract

Ohmic and Schottky Interfaces for Oxide Electronics Complex oxide materials exhibit a wide array of unusual functional properties that can be employed to overcome numerous technological challenges. In article number 2100087, Jie Zhang, Valentino R. Cooper, Matthew Brahlek, and co-workers demonstrate how a detailed understanding of the alignment of electronic states at oxide-oxide interfaces can enable designing devices to realize this potential and opens many routes to exploit these fascinating materials.

Locations

• Small Science - View - PDF
• arXiv (Cornell University) - View - PDF
• OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) - View