Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

Type: Article

Publication Date: 2014-09-30

Citations: 4

DOI: https://doi.org/10.1088/1748-0221/9/09/t09002

Abstract

We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between −2°C and 25°C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%.

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