Observation and origin of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="normal">Δ</mml:mi></mml:math> manifold in Si:P <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>δ</mml:mi></mml:math> layers

Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan, Frode S. Strand, Thomas Nyborg, Davide Curcio, Alex K. Schenk, Simon P. Cooil, Marco Bianchi, Justin W. Wells

Abstract

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $\mathrm{\ensuremath{\Delta}}$ manifold is revealed. Moreover, the number of carriers hosted within the $\mathrm{\ensuremath{\Delta}}$ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

Locations

• Physical review. B./Physical review. B - View
• arXiv (Cornell University) - View - PDF
• DataCite API - View