Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Type: Preprint

Publication Date: 2019-01-01

Citations: 0

DOI: https://doi.org/10.48550/arxiv.1908.01101

Locations

  • arXiv (Cornell University) - View
  • DataCite API - View

Similar Works

Action Title Year Authors
+ PDF Chat Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to <b> <i>β</i> </b>-Ga2O3 2022 A. Ardenghi
Oliver Bierwagen
Andreas Falkenstein
Georg Hoffmann
Jonas Lähnemann
Manfred Martin
Piero Mazzolini
+ Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3 2022 A. Ardenghi
Oliver Bierwagen
A. Falkenstein
G. Hoffmann
Jonas Lähnemann
M. Martin
Piero Mazzolini
+ Ion implantation in \b{eta}-Ga2O3: physics and technology 2021 Alena Nikolskaya
E.V. Okulich
Д. С. Королев
Anton Stepanov
Д. Е. Николичев
A. N. Mikhaylov
D. I. Tetelbaum
А. V. Аlmaev
Charles A. Bolzan
Antônio Jr Buaczik
+ PDF Chat Ion implantation in β-Ga2O3: Physics and technology 2021 Alena Nikolskaya
E.V. Okulich
Д. С. Королев
Anton Stepanov
Д. Е. Николичев
A. N. Mikhaylov
D. I. Tetelbaum
А. V. Аlmaev
Charles A. Bolzan
Antônio Jr Buaczik
+ Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time 2023 Katie R. Gann
Naomi Pieczulewski
Cameron A. Gorsak
Karen N. Heinselman
Thaddeus J. Asel
Brenton A. Noesges
Keith T. Smith
D. M. Dryden
Huili Grace Xing
Hari P. Nair
+ Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure 2023 Jonathan P. McCandless
Cameron A. Gorsak
Vladimir Protasenko
Darrell G. Schlom
Michael O. Thompson
Huili Grace Xing
Debdeep Jena
Hari P. Nair
+ In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge 2023 Wen-Shan Chen
Kingsley Egbo
Hans Tornatzky
M. Ramsteiner
Markus Robert Wagner
Oliver Bierwagen
+ PDF Chat <i>In situ</i> study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge 2023 Wen-Shan Chen
Kingsley Egbo
Hans Tornatzky
M. Ramsteiner
Markus R. Wagner
Oliver Bierwagen
+ PDF Chat Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge 2024 Wen-Shan Chen
Kingsley Egbo
Huaide Zhang
A. Ardenghi
Oliver Bierwagen
+ Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices 2023 Sudipto Saha
Lingyu Meng
A F M Anhar Uddin Bhuiyan
Ankit Sharma
Chinmoy Nath Saha
Hongping Zhao
Uttam Singisetti
+ Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge 2024 Wen-Shan Chen
Kingsley Egbo
Huaide Zhang
A. Ardenghi
Oliver Bierwagen
+ PDF Chat In situ Etching of \b{eta}-Ga2O3 using tert-Butyl Chloride in an MOCVD System 2024 Cameron A. Gorsak
Henry J. Bowman
Katie R. Gann
Kathleen T. Smith
Jacob Steele
Debdeep Jena
Darrell G. Schlom
Huili Huili
Xing Xing
Michael O. Thompson
+ PDF Chat Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3 2024 Nathan D. Rock
Haobo Yang
Brian A. Eisner
A.D. Levin
Arkka Bhattacharyya
Sriram Krishnamoorthy
Praneeth Ranga
Michael Walker
Larry Wang
Ming Kit Cheng
+ Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography 2020 Jith Sarker
A F M Anhar Uddin Bhuiyan
Zixuan Feng
Hongping Zhao
Baishakhi Mazumder
+ PDF Chat Unveiling hole-facilitated amorphisation in pressure-induced phase transformation of silicon 2024 Tong Zhao
Shulin Zhong
Yuxin Sun
Defan Wu
Chunyi Zhang
Rui Shi
Hao Chen
Zhenyi Ni
Xiaodong Pi
Xiangyang Ma
+ PDF Chat Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources 2021 Georg Hoffmann
Zongzhe Cheng
O. Brandt
Oliver Bierwagen
+ PDF Chat Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO$_2$, SnO$_2$, and (Sn$_x$Ge$_{1-x}$)O$_2$ during suboxide molecular beam epitaxy 2024 Wen-Shan Chen
Kingsley Egbo
Joe Kler
Andreas Falkenstein
Jonas Lähnemann
Oliver Bierwagen
+ Low temperature homoepitaxy of (010) <b> <i>β</i> </b>-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window 2020 Arkka Bhattacharyya
Praneeth Ranga
Saurav Roy
Jonathan Ogle
Luisa Whittaker‐Brooks
Sriram Krishnamoorthy
+ PDF Chat Delta-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films and <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown by metalorganic vapor-phase epitaxy 2020 Praneeth Ranga
Arkka Bhattacharyya
Ashwin K. Rishinaramangalam
Yu Kee Ooi
Michael A. Scarpulla
Daniel Feezell
Sriram Krishnamoorthy
+ Plasma processes affecting etching and growth of nitride materials 2023 Yuri Barsukov

Works That Cite This (0)

Action Title Year Authors

Works Cited by This (0)

Action Title Year Authors