Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

Type: Article

Publication Date: 2017-03-16

Citations: 24

DOI: https://doi.org/10.1109/jqe.2017.2682702

Abstract

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-toelectrical conversion. We achieve a timing jitter of 10 ps and a quality factor of ≳ 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> across the entire X-band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J.

Locations

  • arXiv (Cornell University) - View - PDF
  • HAL (Le Centre pour la Communication Scientifique Directe) - View
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  • IEEE Journal of Quantum Electronics - View

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