Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi

Yufan Li, Naoya Kanazawa, Xianwen Yu, Atsushi Tsukazaki, M. Kawasaki, Masakazu Ichikawa, Xiaofeng Jin, Fumitaka Kagawa, Yoshinori Tokura

Type: Article

Publication Date: 2013-03-12

Citations: 304

DOI: https://doi.org/10.1103/physrevlett.110.117202

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Abstract

Magnetotransport properties have been investigated for epitaxial thin films of B20-type MnSi grown on Si(111) substrates. Lorentz transmission electron microscopy images clearly point to the robust formation of Skyrmions over a wide temperature-magnetic field region. New features distinct from those reported previously for MnSi are observed for epitaxial films: a shorter (nearly half) period of the spin helix and Skyrmions, and a topological Hall effect anomaly consisting in ∼2.2 times enhancement of the amplitude and in the opposite sign with respect to bulk samples.

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