Type: Article
Publication Date: 2015-10-07
Citations: 14
DOI: https://doi.org/10.1103/physrevb.92.165201
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor $({\mathrm{Se}}^{+})$ possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation $({T}_{1})$ and coherence $({T}_{2})$ times of ${\mathrm{Se}}^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\ensuremath{\sim}15\phantom{\rule{0.28em}{0ex}}\mathrm{K}$. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral ${\mathrm{Se}}^{0}$.