Materials Science â€ș Materials Chemistry

Advanced Thermoelectric Materials and Devices

Description

This cluster of papers focuses on the advances in thermoelectric materials research, including high-performance nanostructured bulk alloys, high-temperature figure of merit, and applications in energy harvesting and waste heat recovery.

Keywords

Thermoelectric; Materials; Performance; Nanostructured; High-Temperature; Figure of Merit; Bulk Alloys; Energy Harvesting; Electrical Transport; Waste Heat Recovery

Thermoelectrics are devices that convert heat to electricity directly, or vice versa. To be technologically useful, thermoelectric materials with high efficiency must be found, along with better tools to understand 
 Thermoelectrics are devices that convert heat to electricity directly, or vice versa. To be technologically useful, thermoelectric materials with high efficiency must be found, along with better tools to understand them. In his Perspective, Majumdar discusses the reports by Hsu et al . and Lyeo et al . that tackle these issues. Hsu et al . have found a new bulk material that exhibits a so-called figure of merit with a value around 2, which is an encouraging step on the road to materials that could compete with conventional thermodynamic devices such as power generators and refrigerators. Lyeo et al . report on a new technique for measuring thermoelectric properties over nanometer scales. The interdisciplinary combination of thermoelectric research with microelectronics and nanotechnology, Majumdar argues, will have a positive impact on both fields.
PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials 
 PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.
We investigate the effect on the thermoelectric figure of merit of preparing materials in the form of one-dimensional conductors or quantum wires. Our calculations show that this approach has the 
 We investigate the effect on the thermoelectric figure of merit of preparing materials in the form of one-dimensional conductors or quantum wires. Our calculations show that this approach has the potential to achieve a significant increase in the figure of merit over both the bulk value and the calculated superlattice values.
Skutterudites CoSb3 with multiple cofillers Ba, La, and Yb were synthesized and very high thermoelectric figure of merit ZT = 1.7 at 850 K was realized. X-ray diffraction of the 
 Skutterudites CoSb3 with multiple cofillers Ba, La, and Yb were synthesized and very high thermoelectric figure of merit ZT = 1.7 at 850 K was realized. X-ray diffraction of the densified multiple-filled bulk samples reveals all samples are phase pure. High-resolution scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) analysis confirm that multiple guest fillers occupy the nanoscale-cages in the skutterudites. The fillers are further shown to be uniformly distributed and the Co−Sb skutterudite framework is virtually unperturbed from atomic scale to a few micrometers. Our results firmly show that high power factors can be realized by adjusting the total filling fraction of fillers with different charge states to reach the optimum carrier density, at the same time, lattice thermal conductivity can also be significantly reduced, to values near the glass limit of these materials, through combining filler species of different rattling frequencies to achieve broad-frequency phonon scattering. Therefore, partially filled skutterudites with multiple fillers of different chemical nature render unique structural characteristics for optimizing electrical and thermal transports in a relatively independent way, leading to continually enhanced ZT values from single- to double-, and finally to multiple-filled skutterudites. The idea of combining multiple fillers with different charge states and rattling frequencies for performance optimization is also expected to be valid for other caged TE compounds.
The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more 
 The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPb(m)SbTe(2+m) may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of approximately 2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPb(m)SbTe(2+m) material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.
Mg(2)Si and Mg(2)Sn are indirect band gap semiconductors with two low-lying conduction bands (the lower mass and higher mass bands) that have their respective band edges reversed in the two 
 Mg(2)Si and Mg(2)Sn are indirect band gap semiconductors with two low-lying conduction bands (the lower mass and higher mass bands) that have their respective band edges reversed in the two compounds. Consequently, for some composition x, Mg(2)Si(1-x)Sn(x) solid solutions must display a convergence in energy of the two conduction bands. Since Mg(2)Si(1-x)Sn(x) solid solutions are among the most prospective of the novel thermoelectric materials, we aim on exploring the influence of such a band convergence (valley degeneracy) on the Seebeck coefficient and thermoelectric properties in a series of Mg(2)Si(1-x)Sn(x) solid solutions uniformly doped with Sb. Transport measurements carried out from 4 to 800 K reveal a progressively increasing Seebeck coefficient that peaks at x=0.7. At this concentration the thermoelectric figure of merit ZT reaches exceptionally large values of 1.3 near 700 K. Our first principles calculations confirm that at the Sn content x≈0.7 the two conduction bands coincide in energy. We explain the high Seebeck coefficient and ZT values as originating from an enhanced density-of-states effective mass brought about by the increased valley degeneracy as the two conduction bands cross over. We corroborate the increase in the density-of-states effective mass by measurements of the low temperature specific heat. The research suggests that striving to achieve band degeneracy by means of compositional variations is an effective strategy for enhancing the thermoelectric properties of these materials.
This review discusses recent developments and current research in bulk thermoelectric materials in which nanostructuring is a key aspect affecting thermoelectric performance. Systems based on PbTe, AgPbmSbTe2+m, NaPbmSbTe2+m, Bi2Te3, and 
 This review discusses recent developments and current research in bulk thermoelectric materials in which nanostructuring is a key aspect affecting thermoelectric performance. Systems based on PbTe, AgPbmSbTe2+m, NaPbmSbTe2+m, Bi2Te3, and Si are given particular emphasis. To date the dramatic enhancements in figure of merit in bulk nanostructured materials come from very large reductions in lattice thermal conductivity rather than improvement in power factors. A discussion of future possible strategies is aimed at enhancing the thermoelectric figure of merit of these materials.
The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). 
 The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). The zT of bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi(0.5)Sb(1.5)Te3 (bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT to 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.
Thermoelectric materials have drawn vast attentions for centuries, because thermoelectric effects enable direct conversion between thermal and electrical energy, thus providing an alternative for power generation and refrigeration. This review 
 Thermoelectric materials have drawn vast attentions for centuries, because thermoelectric effects enable direct conversion between thermal and electrical energy, thus providing an alternative for power generation and refrigeration. This review summaries the thermoelectric phenomena, applications and parameter relationships. The approaches used for thermoelectric performance enhancement are outlined, including: modifications of electronic band structures and band convergence to enhance Seebeck coefficients; nanostructuring and all-scale hierarchical architecturing to reduce the lattice thermal conductivity. Several promising thermoelectric materials with intrinsically low thermal conductivities are introduced. The low thermal conductivities may arise from large molecular weights, complex crystal structures, liquid like transports or high anharmonicity of chemical bonds. At the end, a discussion of future possible strategies is proposed, aiming at further thermoelectric performance enhancements.
The field of thermoelectric energy conversion is reviewed from both a theoretical and an experimental standpoint. The basic theory is introduced and the thermodynamic and solid state views are compared. 
 The field of thermoelectric energy conversion is reviewed from both a theoretical and an experimental standpoint. The basic theory is introduced and the thermodynamic and solid state views are compared. An overview of the development of thermoelectric materials is presented with particular emphasis being placed on the most recent developments in high-temperature semiconductors. A number of possible device applications are discussed and the successful use and suitability of these devices for space power is manifest.
In analyzing zT improvements due to lattice thermal conductivity (ÎșL) reduction, electrical conductivity (σ) and total thermal conductivity (ÎșTotal) are often used to estimate the electronic component of the thermal 
 In analyzing zT improvements due to lattice thermal conductivity (ÎșL) reduction, electrical conductivity (σ) and total thermal conductivity (ÎșTotal) are often used to estimate the electronic component of the thermal conductivity (ÎșE) and in turn ÎșL from ÎșL = ∌ ÎșTotal − LσT. The Wiedemann-Franz law, ÎșE = LσT, where L is Lorenz number, is widely used to estimate ÎșE from σ measurements. It is a common practice to treat L as a universal factor with 2.44 × 10−8 WΩK−2 (degenerate limit). However, significant deviations from the degenerate limit (approximately 40% or more for Kane bands) are known to occur for non-degenerate semiconductors where L converges to 1.5 × 10−8 WΩK−2 for acoustic phonon scattering. The decrease in L is correlated with an increase in thermopower (absolute value of Seebeck coefficient (S)). Thus, a first order correction to the degenerate limit of L can be based on the measured thermopower, |S|, independent of temperature or doping. We propose the equation: L=1.5+exp−|S|116 (where L is in 10−8 WΩK−2 and S in ÎŒV/K) as a satisfactory approximation for L. This equation is accurate within 5% for single parabolic band/acoustic phonon scattering assumption and within 20% for PbSe, PbS, PbTe, Si0.8Ge0.2 where more complexity is introduced, such as non-parabolic Kane bands, multiple bands, and/or alternate scattering mechanisms. The use of this equation for L rather than a constant value (when detailed band structure and scattering mechanism is not known) will significantly improve the estimation of lattice thermal conductivity.
Thermoelectric materials are solid-state energy converters whose combination of thermal, electrical, and semiconducting properties allows them to be used to convert waste heat into electricity or electrical power directly into 
 Thermoelectric materials are solid-state energy converters whose combination of thermal, electrical, and semiconducting properties allows them to be used to convert waste heat into electricity or electrical power directly into cooling and heating. These materials can be competitive with fluid-based systems, such as two-phase air-conditioning compressors or heat pumps, or used in smaller-scale applications such as in automobile seats, night-vision systems, and electrical-enclosure cooling. More widespread use of thermoelectrics requires not only improving the intrinsic energy-conversion efficiency of the materials but also implementing recent advancements in system architecture. These principles are illustrated with several proven and potential applications of thermoelectrics.
The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is 
 The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.
What electronic structure provides the largest figure of merit for thermoelectric materials? To answer that question, we write the electrical conductivity, thermopower, and thermal conductivity as integrals of a single 
 What electronic structure provides the largest figure of merit for thermoelectric materials? To answer that question, we write the electrical conductivity, thermopower, and thermal conductivity as integrals of a single function, the transport distribution. Then we derive the mathematical function for the transport distribution, which gives the largest figure of merit. A delta-shaped transport distribution is found to maximize the thermoelectric properties. This result indicates that a narrow distribution of the energy of the electrons participating in the transport process is needed for maximum thermoelectric efficiency. Some possible realizations of this idea are discussed.
Abstract The field of thermoelectrics has progressed enormously and is now growing steadily because of recently demonstrated advances and strong global demand for cost‐effective, pollution‐free forms of energy conversion. Rapid 
 Abstract The field of thermoelectrics has progressed enormously and is now growing steadily because of recently demonstrated advances and strong global demand for cost‐effective, pollution‐free forms of energy conversion. Rapid growth and exciting innovative breakthroughs in the field over the last 10–15 years have occurred in large part due to a new fundamental focus on nanostructured materials. As a result of the greatly increased research activity in this field, a substantial amount of new data—especially related to materials—have been generated. Although this has led to stronger insight and understanding of thermoelectric principles, it has also resulted in misconceptions and misunderstanding about some fundamental issues. This article sets out to summarize and clarify the current understanding in this field; explain the underpinnings of breakthroughs reported in the past decade; and provide a critical review of various concepts and experimental results related to nanostructured thermoelectrics. We believe recent achievements in the field augur great possibilities for thermoelectric power generation and cooling, and discuss future paths forward that build on these exciting nanostructuring concepts.
A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight 
 A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and 50% higher than the reported record in p-type SiGe alloys. These nanostructured bulk materials were made by using a direct current-induced hot press of mechanically alloyed nanopowders that were initially synthesized by ball milling of commercial grade Si and Ge chunks with boron powder. The enhancement of ZT is due to a large reduction of thermal conductivity caused by the increased phonon scattering at the grain boundaries of the nanostructures combined with an increased power factor at high temperatures.
Abstract Lead chalcogenides have long been used for space‐based and thermoelectric remote power generation applications, but recent discoveries have revealed a much greater potential for these materials. This renaissance of 
 Abstract Lead chalcogenides have long been used for space‐based and thermoelectric remote power generation applications, but recent discoveries have revealed a much greater potential for these materials. This renaissance of interest combined with the need for increased energy efficiency has led to active consideration of thermoelectrics for practical waste heat recovery systems—such as the conversion of car exhaust heat into electricity. The simple high symmetry NaCl‐type cubic structure, leads to several properties desirable for thermoelectricity, such as high valley degeneracy for high electrical conductivity and phonon anharmonicity for low thermal conductivity. The rich capabilities for both band structure and microstructure engineering enable a variety of approaches for achieving high thermoelectric performance in lead chalcogenides. This Review focuses on manipulation of the electronic and atomic structural features which makes up the thermoelectric quality factor. While these strategies are well demonstrated in lead chalcogenides, the principles used are equally applicable to most good thermoelectric materials that could enable improvement of thermoelectric devices from niche applications into the mainstream of energy technologies.
This review is an update of a previous review (A. J. Minnich, et al., Energy Environ. Sci., 2009, 2, 466) published two years ago by some of the co-authors, focusing 
 This review is an update of a previous review (A. J. Minnich, et al., Energy Environ. Sci., 2009, 2, 466) published two years ago by some of the co-authors, focusing on progress made in thermoelectrics over the past two years on charge and heat carrier transport, strategies to improve the thermoelectric figure of merit, with new discussions on device physics and applications, and assessing challenges on these topics. Understanding of phonon transport in bulk materials has advanced significantly as the first-principles calculations are applied to thermoelectric materials, and experimental tools are being developed. Some new strategies have been developed to improve electron transport in thermoelectric materials. Fundamental questions on phonon and electron transport across interfaces and in thermoelectric materials remain. With thermoelectric materials reaching high ZT values well above one, the field is ready to take a step forward and go beyond the materials' figure of merit. Developing device contacts and module fabrication techniques, developing a platform for efficiency measurements, and identifying applications are becoming increasingly important for the future of thermoelectrics.
Thermoelectrics have long been recognized as a potentially transformative energy conversion technology due to their ability to convert heat directly into electricity. Despite this potential, thermoelectric devices are not in 
 Thermoelectrics have long been recognized as a potentially transformative energy conversion technology due to their ability to convert heat directly into electricity. Despite this potential, thermoelectric devices are not in common use because of their low efficiency, and today they are only used in niche markets where reliability and simplicity are more important than performance. However, the ability to create nanostructured thermoelectric materials has led to remarkable progress in enhancing thermoelectric properties, making it plausible that thermoelectrics could start being used in new settings in the near future. Of the various types of nanostructured materials, bulk nanostructured materials have shown the most promise for commercial use because, unlike many other nanostructured materials, they can be fabricated in large quantities and in a form that is compatible with existing thermoelectric device configurations. The first generation of these materials is currently being developed for commercialization, but creating the second generation will require a fundamental understanding of carrier transport in these complex materials which is presently lacking. In this review we introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions. Finally, we discuss several research directions which could lead to the next generation of bulk nanostructured materials.
The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 
 The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100 degrees C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250 degrees C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86 degrees , 106 degrees , and 119 degrees C with hot-side temperatures set at 50 degrees, 100 degrees, and 150 degrees C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.
Abstract Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the 
 Abstract Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the thermoelectric figure of merit (ZT) by maximizing the power factor and/or minimizing the thermal conductivity. Attempts at maximizing the power factor include the development of new materials, optimization of existing materials by doping, and the exploration of nanoscale materials. The minimization of the thermal conductivity can come through solid‐solution alloying, use of materials with intrinsically low thermal conductivity, and nanostructuring. Herein we describe the most promising bulk materials with emphasis on results from the last decade. Single‐phase bulk materials are discussed in terms of chemistry, crystal structure, physical properties, and optimization of thermoelectric performance. The new opportunities for enhanced performance bulk nanostructured composite materials are examined and a look into the not so distant future is attempted.
Heat conversion gets a power boost Thermoelectric materials convert waste heat into electricity, but often achieve high conversion efficiencies only at high temperatures. Zhao et al. tackle this problem by 
 Heat conversion gets a power boost Thermoelectric materials convert waste heat into electricity, but often achieve high conversion efficiencies only at high temperatures. Zhao et al. tackle this problem by introducing small amounts of sodium to the thermoelectric SnSe (see the Perspective by Behnia). This boosts the power factor, allowing the material to generate more energy while maintaining good conversion efficiency. The effect holds across a wide temperature range, which is attractive for developing new applications. Science , this issue p. 141 ; see also p. 124
Abstract Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency 
 Abstract Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∌1.5 at 1,200 K for the p -type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron–phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm −2 at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability.
There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the 
 There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.
The past two decades have witnessed the rapid growth of thermoelectric (TE) research. Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE 
 The past two decades have witnessed the rapid growth of thermoelectric (TE) research. Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE performance. These superior aspects include band convergence, “phonon‐glass electron‐crystal”, multiscale phonon scattering, resonant states, anharmonicity, etc. Based on these concepts, some new TE materials with distinct features have been identified, including solids with high band degeneracy, with cages in which atoms rattle, with nanostructures at various length scales, etc. In addition, the performance of classical materials has been improved remarkably. However, the figure of merit zT of most TE materials is still lower than 2.0, generally around 1.0, due to interrelated TE properties. In order to realize an “overall zT > 2.0,” it is imperative that the interrelated properties are decoupled more thoroughly, or new degrees of freedom are added to the overall optimization problem. The electrical and thermal transport must be synergistically optimized. Here, a detailed discussion about the commonly adopted strategies to optimize individual TE properties is presented. Then, four main compromises between the TE properties are elaborated from the point of view of the underlying mechanisms and decoupling strategies. Finally, some representative systems of synergistic optimization are also presented, which can serve as references for other TE materials. In conclusion, some of the newest ideas for the future are discussed.
High-performance thermoelectric materials lie at the heart of thermoelectrics, the simplest technology applicable to direct thermal-to-electrical energy conversion. In its recent 60-year history, the field of thermoelectric materials research has 
 High-performance thermoelectric materials lie at the heart of thermoelectrics, the simplest technology applicable to direct thermal-to-electrical energy conversion. In its recent 60-year history, the field of thermoelectric materials research has stalled several times, but each time it was rejuvenated by new paradigms. This article reviews several potentially paradigm-changing mechanisms enabled by defects, size effects, critical phenomena, anharmonicity, and the spin degree of freedom. These mechanisms decouple the otherwise adversely interdependent physical quantities toward higher material performance. We also briefly discuss a number of promising materials, advanced material synthesis and preparation techniques, and new opportunities. The renewable energy landscape will be reshaped if the current trend in thermoelectric materials research is sustained into the foreseeable future.
Currently the materials with the highest thermoelectric figure of merit Z are ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ alloys. Therefore these compounds are the best thermoelectric refrigeration elements. However, since the 1960s only slow progress 
 Currently the materials with the highest thermoelectric figure of merit Z are ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ alloys. Therefore these compounds are the best thermoelectric refrigeration elements. However, since the 1960s only slow progress has been made in enhancing Z, either in ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ alloys or in other thermoelectric materials. So far, the materials used in applications have all been in bulk form. In this paper, it is proposed that it may be possible to increase Z of certain materials by preparing them in quantum-well superlattice structures. Calculations have been done to investigate the potential for such an approach, and also to evaluate the effect of anisotropy on the figure of merit. The calculations show that layering has the potential to increase significantly the figure of merit of a highly anisotropic material such as ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$, provided that the superlattice multilayers are made in a particular orientation. This result opens the possibility of using quantum-well superlattice structures to enhance the performance of thermoelectric coolers.
Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT Here we show a 
 Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT Here we show a maximum ZT of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we 
 The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.
Introduction, D.M. Rowe General Principles and Theoretical Considerations Thermoelectric Phenomena, D.D. Pollock Coversion Efficiency and Figure-of-Merit, H.J. Goldsmid Thermoelectric Transport Theory, C.M. Bhandari Optimization of Carrier Concentration, C.M. Bhandari and 
 Introduction, D.M. Rowe General Principles and Theoretical Considerations Thermoelectric Phenomena, D.D. Pollock Coversion Efficiency and Figure-of-Merit, H.J. Goldsmid Thermoelectric Transport Theory, C.M. Bhandari Optimization of Carrier Concentration, C.M. Bhandari and D.M. Rowe Minimizing the Thermal Conductivity, C.M. Bhandari Selective Carrier Scattering in Thermoelectric Materials, Y.I. Ravich Thermomagnetic Phenomena, H.J. Goldsmid Material Preparation Preparation of Thermoelectric Materials from Melts, A. Borshchevsky Powder Metallurgy Techniques, A.N. Scoville PIES Method of Preparing Bismuth Alloys, T. Ohta and T. Kajikawa Preparation of Thermoelectric Materials by Mechanical Alloying, B.A. Cook, J.L. Harringa, and S.H. Han Preparation of Thermoelectric Films, K. Matsubara, T. Koyanagi, K. Nagao, and K. Kishimoto Measurement of Thermoelectric Properties Calculation of Peltier Device Performance, R.J. Buist Measurements of Electrical Properties, I.A. Nishida Measurement of Thermal Properties, R. Taylor Z-Meters, H.H. Woodbury, L.M. Levinson, and S. Lewandowski Methodology for Testing Thermoelectric Materials and Devices, R.J. Buist Thermoelectric Materials Bismuth Telluride, Antimony Telluride, and Their Solid Solutions, H. Scherrer and S. Scherrer Valence Band Structure and the Thermoelectric Figure-of-Merit of (Bi1-xSbx)Te3 Crystals, M. Stordeur Lead Telluride and Its Alloys, V. Fano Properties of the General Tags System, E.A. Skrabek and D.S. Trimmer Thermoelectric Properties of Silicides, C.B. Vining Polycrystalline Iron Disilicide as a Thermoelectric Generator Material, U. Birkholz, E. Gross, and U. Stohrer Thermoelectric Properties of Anisotropic MnSi1.75 , V.K. Zaitsev Low Carrier Mobility Materials for Thermoelectric Applications, V.K. Zaitsev, S.A. Ktitorov, and M.I. Federov Semimetals as Materials for Thermoelectric Generators, M.I. Fedorov and V.K. Zaitsev Silicon Germanium, C.B. Vining Rare Earth Compounds, B.J. Beaudry and K.A. Gschneidner, Jr. Thermoelectric Properties of High-Temperature Superconductors, M. Cassart and J.-P. Issi Boron Carbides, T.L. Aselage and D. Emin Thermoelectric Properties of Metallic Materials, A.T. Burkov and M.V. Vedernikov Neutron Irradiation Damage in SiGe Alloys, J.W. Vandersande New Materials and Performance Limits for Thermoelectric Cooling, G.A. Slack Thermoelectric Generation Miniature Semiconductor Thermoelectric Devices, D.M. Rowe Commercially Available Generators, A.G. McNaughton Modular RTG Technology, R.F. Hartman Peltier Devices as Generators, G. Min and D.M. Rowe Calculations of Generator Performance, M.H. Cobble Generator Applications Terrestrial Applications of Thermoelectric Generators, W.C. Hall Space Applications, G.L. Bennett SP-100 Space Subsystems, J.F. Mondt Safety Aspects of Thermoelectrics in Space, G.L. Bennett Low-Temperature Heat Conversion, K. Matsuura and D.M. Rowe Thermoelectric Refrigeration Introduction, H.J. Goldsmid Module Design and Fabrication, R. Marlow and E. Burke Cooling Thermoelements with Superconducting Leg, M.V. Vedernikov and V.L. Kuznetsov Applications of Thermoelectric Cooling Introduction, H.J. Goldsmid Commercial Peltier Modules, K.-I. Uemura Thermoelectrically Cooled Radiation Detectors, L.I. Anatychuk Reliability of Peltier Coolers in Fiber-Optic Laser Packages, R.M. Redstall and R. Studd Laboratory Equipment, K.-I. Uemura Large-Scale Cooling: Integrated Thermoelectric Element Technology, J.G. Stockholm Medium-Scale Cooling: Thermoelectric Module Technology, J.G. Stockholm Modeling of Thermoelectric Cooling Systems, J.G. Stockholm
Bi2Te3-based materials remain among the most promising thermoelectric candidates for applications in the temperature range of 300-400 K, owing to their high electrical conductivity, low thermal conductivity, chemical stability, and 
 Bi2Te3-based materials remain among the most promising thermoelectric candidates for applications in the temperature range of 300-400 K, owing to their high electrical conductivity, low thermal conductivity, chemical stability, and compatibility with scalable fabrication methods. However, conventional crystal growth techniques often lead to elemental segregation and compositional inhomogeneity. In this study, a rapid solidification approach using melt spinning was employed to mitigate segregation, yielding compositionally uniform Bi2Te3-based powders with particle sizes below 30 ÎŒm and nanometer-scale grain structures. The fabrication process - integrating planetary ball milling, annealing, melt spinning, and spark plasma sintering - significantly enhanced phonon scattering, thereby reducing thermal conductivity and improving overall material homogeneity. By systematically adjusting the tellurium content in Bi0.5Sb1.5Te3-x, the composition with x = 0.15 was identified as optimal, achieving a peak dimensionless figure of merit (ZT) of 1.18 at 360 K.
Thermoelectric materials enabling direct interconversion between thermal and electrical energy hold transformative potential for sustainable energy technologies, particularly in solid-state power generation and precision refrigeration systems. The pursuit of high-performance 
 Thermoelectric materials enabling direct interconversion between thermal and electrical energy hold transformative potential for sustainable energy technologies, particularly in solid-state power generation and precision refrigeration systems. The pursuit of high-performance thermoelectric materials with exceptional energy conversion efficiency has remained a persistent challenge in materials science, primarily constrained by the resource-intensive nature of traditional experimental approaches and computationally demanding first-principles simulations. The emergence of machine learning (ML) techniques has revolutionized this field by enabling rapid screening of material candidates and establishing quantitative structure-property relationships. This comprehensive review systematically examines cutting-edge methodologies in ML-driven thermoelectric materials research, with particular emphasis on three pivotal aspects: (1) predictive modeling of key performance parameters including electrical conductivity, Seebeck coefficient, and lattice thermal conductivity through advanced feature engineering and algorithm selection; (2) inverse design strategies for optimizing carrier concentration and phonon scattering mechanisms; (3) application-specific material optimization frameworks integrating multi-objective constraints. Furthermore, we critically analyze prevailing challenges in data quality, model interpretability, and cross-scale prediction accuracy, while proposing future research directions encompassing active learning paradigms, generative adversarial networks for virtual material synthesis, and hybrid physics-informed ML architectures.
Today's world has focused on investigating the thermoelectric properties of semiconductors related to problems such as direct conversion of heat energy to electrical energy and direct conversion of electrical energy 
 Today's world has focused on investigating the thermoelectric properties of semiconductors related to problems such as direct conversion of heat energy to electrical energy and direct conversion of electrical energy to heat. In addition, the investigation of the thermoelectric properties of semiconductors is one of the basic researches of semiconductor physics and is important for the development of related sciences. Thermoelectric semiconductors are known to have the most usage area even now; It is thought that it can be used in different fields in the near future. Systems made of thermoelectric semiconductors are used in a wide area ranging from space technology to white goods technology. The research of these systems continues by deepening and expanding day by day. Because the basic information obtained here is transferred to the industry in a shorter time compared to other technologies and makes money. Therefore, most research has focused on the thermoelectric properties of semiconductors and thermoelectric technology. In the article, thermoelectric parameters of P- type Bi2Te3 semiconductors in the temperature range of 291-373K were investigated. The thermoemf, electrical conductivity, thermal conductivity, Z parameter behaviour at high temperatures of two types of P-type semiconductors obtained by two different methods were investigated and compared with the theoretical findings. In addition, using the variation of electrical conductivity with temperature, the band gap of the semiconductors was calculated separately and compared with the theory. It has been determined that the experimental results obtained are the same as the theoretical information within the error limits.
Solar energy is one of the viable solutions for global energy demand. To compete with traditional resources, solar cells have to be reliable and cost-effective. This paper reviews the basics 
 Solar energy is one of the viable solutions for global energy demand. To compete with traditional resources, solar cells have to be reliable and cost-effective. This paper reviews the basics of thermoelectric generators (TEGs), including their working principles and main physical properties. TEGs transform heat directly to electricity based on the Seebeck effect, which generates an electric voltage based on the difference in temperature of a material. It presents methods for energy harvesting by using TEGs integrated with photovoltaic (PV) systems and discusses the application and findings of this hybrid model. By converting solar system waste heat or primary heat flow into additional heating, cooling, and electricity, TEGs enhance PV system efficiency. This paper reviews the methods and effects of integrating thermoelectric devices with PV systems, summarizing key findings from previous studies. The paper concludes that the integration of TEGs significantly improves the functionality and efficiency of PV systems, as evidenced by previous studies. Received: 14 November 2024 | Revised: 27 April 2025 | Accepted: 29 May 2025 Conflicts of Interest The authors declare that they have no conflicts of interest to this work. Data Availability Statement Data available on request from the corresponding author upon reasonable request. Author Contribution Statement Oluwasegun Henry Jaiyeob: Conceptualization, Software, Validation, Formal analysis, Investigation, Resources, Data curation, Writing - original draft, Writing - review & editing, Visualization. Mohammad Karimzadeh Kolamroudi: Conceptualization, Methodology, Validation, Formal analysis, Investigation, Resources, Data curation, Writing - original draft, Writing - review & editing, Visualization, Supervision, Project administration. Cemal Kavalcioglu: Validation, Investigation, Writing - original draft, Writing - review & editing. Çağrı Özkan: Software, Writing - original draft, Writing - review & editing. Said EL Khatib: Conceptualization, Resources, Writing - original draft, Writing - review & editing.
Abstract Developing highly sensitive and stable terahertz (THz) polarization detection and imaging systems is crucial for remote sensing, communication, military surveillance, and imaging. However, achieving high sensitivity and stability while 
 Abstract Developing highly sensitive and stable terahertz (THz) polarization detection and imaging systems is crucial for remote sensing, communication, military surveillance, and imaging. However, achieving high sensitivity and stability while effectively suppressing background interference in complex target imaging presents several significant challenges. Herein, two different metasurface structures (type I and type II) and different Cs 0.05 (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 (CsFAMA) thicknesses of THz polarization detectors are designed and fabricated, which based on CsFAMA /poly(3,4‐ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT: PSS)/ Metasurface composite structures. The type II device with a 0.8 ”m CsFAMA thickness achieved optimal performance under 0.1 THz laser irradiation, with a responsivity of 435.81 V W⁻Âč, a polarization ratio of 2.53, and a fast response time of 93 ”s, attributed to the heterojunction and metasurface‐localized thermoelectric field. In addition, stability tests are carried out under standard conditions, the polarization ratio decreased by only 3%, and further accelerated aging tests at high temperature and high humidity revealed that the polarization ratio decreased by 15% and 27%, respectively. The polarization imaging clearly and distinctly shows three different complex patterns even after 360 days of air exposure. This study highlights the potential of CsFAMA/metasurface composite devices for highly sensitive and stable THz polarization detection and imaging applications.
Abstract This paper introduces a novel design of a microstructure borophene-based circular polarized slotted antenna aimed at enhancing dual-band THz sensing and detection systems. The proposed antenna features borophene as 
 Abstract This paper introduces a novel design of a microstructure borophene-based circular polarized slotted antenna aimed at enhancing dual-band THz sensing and detection systems. The proposed antenna features borophene as the primary radiating element, a slotted configuration integrated with a defective ground plane, silver feeding for improved conductivity, and a silicon dioxide substrate for structural support. The antenna operates at two distinct resonant frequencies, 1.615 THz and 2.93 THz, which are highly suited for sensing and detection applications in the terahertz range. A thorough parametric analysis was conducted to optimize the antenna’s performance, resulting in exceptional characteristics. At the first resonant frequency of 1.615 THz, the antenna achieves a significant return loss of -57.87 dB, while the second resonant frequency of 2.93 THz exhibits a return loss of -17.30 dB. The antenna provides an impedance bandwidth of 16.14% (ranging from 1.74 to 1.48 THz) at 1.615 THz, and 28.57% (from 3.19 to 2.73 THz) at 2.93 THz, ensuring broad coverage for dual-band operation. The impedance matching is excellent, with a real impedance of 118.71 ohms and an efficiency of 74.18%. The antenna demonstrates circular polarization, verified by an axial ratio close to 1, and further confirmed through field distribution analysis. Co- and cross-polarization characteristics in both the E-plane and H-plane are explored, alongside the 3D radiation patterns for both resonant frequencies. Mode analysis reveals the TE_211 mode at 1.615 THz and the TE_221 mode at 2.93 THz, further validating the antenna's performance. These findings establish the proposed antenna as a promising solution for THz sensing and detection systems, offering superior bandwidth, polarization control, and efficiency for advanced applications.
Abstract This study focuses on designing and analyzing a series of thermomagnetic generators for efficient low-grade waste heat energy harvesting, addressing the challenge of bulky thermal harvesters that cannot be 
 Abstract This study focuses on designing and analyzing a series of thermomagnetic generators for efficient low-grade waste heat energy harvesting, addressing the challenge of bulky thermal harvesters that cannot be integrated into small mechanical structures. A miniature harvester with a total height of 16 mm and a diameter of 8 mm was designed. Using a single heat source at a maximum temperature of 450 K, the system drives multiple thermomagnetic generator units connected in series. Each unit utilizes thermomagnetic material with (MnNiSi) 1-x (Fe 2 Ge) x compositions with x values of 0.3, 0.32, 0.33, and 0.34. These materials operate within a Curie temperature range of 300 K to 420 K, enabling continuous operation as the heat transfers between units. Finite element analysis, conducted through COMSOL Multiphysics, was employed for numerical simulation to study the system’s performance. Results show that the three-unit series configuration achieved a peak voltage of 0.2 V per oscillation and 200 oscillations within 60 s. The sequential arrangement of units maximizes residual heat utilization and offers practical applications in industrial waste heat recovery, automotive heat management, and renewable energy systems.
Abstract Organic thermoelectric materials have emerged as compelling candidates for harvesting low‐grade heat in flexible and lightweight energy systems. Compared to conventional inorganic thermoelectric materials, organic thermoelectric materials offer distinct 
 Abstract Organic thermoelectric materials have emerged as compelling candidates for harvesting low‐grade heat in flexible and lightweight energy systems. Compared to conventional inorganic thermoelectric materials, organic thermoelectric materials offer distinct advantages, including intrinsically low thermal conductivity, mechanical flexibility, and compatibility with large‐area and solution‐based processing. While p‐type materials such as poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) have been extensively optimized through solvent treatments and de‐doping strategies, recent advances in air‐stable n‐type polymers such as poly(benzodifurandione) (PBFDO) have greatly narrowed the performance gap and made it feasible to construct fully organic thermoelectric modules. This review highlights recent progress in organic thermoelectric materials with a focus on molecular design, doping mechanisms, and device‐level integration. We examine how novel polymers, dopant formulations, and emerging concepts have been driving improvements in the performance of organic thermoelectric materials toward practical application. Our group's previous contributions to module design such as thermal lamination techniques and integrated circuits are presented as case studies of system‐level implementation. Despite their relatively modest power factors and thermoelectric figures of merit, organic thermoelectric materials possess unique advantages in terms of low weight, processability, and scalability that make them especially suited for gram‐scale modules and powering small‐scale electronic devices and Internet‐of‐Things systems using ambient thermal energy.
The development of bionic sensing devices with advanced physiological functionalities has attracted significant attention in flexible electronics. In this study, we innovatively develop an air-stable photo-induced n-type dopant and a 
 The development of bionic sensing devices with advanced physiological functionalities has attracted significant attention in flexible electronics. In this study, we innovatively develop an air-stable photo-induced n-type dopant and a sophisticated photo-induced patterning technology to construct high-resolution joint-free p-n integrated thermoelectric devices. The exceptional stability of the photo-induced n-type dopant, combined with our meticulously engineered joint-free device architecture, results in extremely low temporal and spatial variations. These minimized variations, coupled with superior linearity, position our devices as viable candidates for artificial thermoreceptors capable of sensing external thermal noxious stimuli. By integrating them into a robotic arm with a pain perception system, we demonstrate accurate pain responses to external thermal stimuli. The system accurately discerns pain levels and initiates appropriate protective actions across varying intensities. Our findings present a novel strategy for constructing high-resolution thermoelectric sensing devices toward precise biomimetic thermoreceptors.
Abstract Thermoelectric materials offer a promising pathway to directly convert waste heat to electricity. However, achieving high performance remains challenging due to intrinsic trade‐offs between electrical conductivity, the Seebeck coefficient, 
 Abstract Thermoelectric materials offer a promising pathway to directly convert waste heat to electricity. However, achieving high performance remains challenging due to intrinsic trade‐offs between electrical conductivity, the Seebeck coefficient, and thermal conductivity, which are further complicated by the presence of defects. This review explores how artificial intelligence (AI) and machine learning (ML) are transforming thermoelectric materials design. Advanced ML approaches including deep neural networks, graph‐based models, and transformer architectures, integrated with high‐throughput simulations and growing databases, effectively capture structure‐property relationships in a complex multiscale defect space and overcome the “curse of dimensionality”. This review discusses AI‐enhanced defect engineering strategies such as composition optimization, entropy and dislocation engineering, and grain boundary design, along with emerging inverse design techniques for generating materials with targeted properties. Finally, it outlines future opportunities in novel physics mechanisms and sustainability, highlighting the critical role of AI in accelerating the discovery of thermoelectric materials.
In this study, the effects of different heat sink designs on the cold side of the modules in a thermoelectric generator (TEG) system placed between the compressor and the intercooler 
 In this study, the effects of different heat sink designs on the cold side of the modules in a thermoelectric generator (TEG) system placed between the compressor and the intercooler of a turbocharged tractor on the system performance were numerically analyzed. In the current literature, heat sinks used in TEG modules generally consist of plate fins. In this study, by using perforated and slotted fins, the thermal boundary layer behaviors were changed and there was an attempt to increase the heat transfer from the cold surface compared to plate fins. Thus, the performance of the TEG system was also increased. When looking at the literature, it is seen that there are studies which aim to increase the performance of TEG modules by changing the dimensions of p and n type semiconductors. However, there is no study aiming to increase the performance of TEG modules by making changes on the plate fins of the heat sinks used in these modules and thus increasing the heat transfer amount. In this respect, this study offers important results for the literature. According to the numerical analysis results, the total TEG output power, output voltage, and thermal efficiency obtained for S0.5H15 were 6.2%, about 3%, and about 5% higher than those for PF, respectively. In addition, the pressure drop values obtained for different heat sinks, except for aluminum foam, were approximately close to each other. In cases with TEG systems where different heat sinks were used, the intercooler inlet air temperatures decreased by approximately 3.4–3.5% compared to the case without the TEG system. This indicates that the use of TEG will positively affect the improvement in engine efficiency.
Converting low-grade waste heat into electricity is crucial for green energy. This study introduces an innovative approach using poly(vinyl alcohol) (PVA)-based ionogels incorporating 1-ethyl-3-methylimidazolium dicyanamide ([EMIM][DCA]) and specific additives: 2-carboxyphenylacetic 
 Converting low-grade waste heat into electricity is crucial for green energy. This study introduces an innovative approach using poly(vinyl alcohol) (PVA)-based ionogels incorporating 1-ethyl-3-methylimidazolium dicyanamide ([EMIM][DCA]) and specific additives: 2-carboxyphenylacetic acid (H), 2-sulfobenzoic acid (S), and 2-carboxyphenyl phosphate (P)). These additives enable successful tailoring of the crystallinity, leading to a substantial increase in the ionic figure-of-merit (zTi), from 0.006 for the PVA ionogel to 0.27 for the ionogel with P additives. Furthermore, the P-additive ionogels exhibit excellent mechanical properties, with a tensile stress of 1.75 MPa and a strain of 460%. A four-pair ionic thermoelectric capacitor made from these ionogels generates 0.33 V and achieves a power output of 2.4 mW m-2. This advancement significantly improves the thermoelectric performance of PVA ionogels, aiding in efficient waste heat utilization and sustainable energy development.
The development of thermoelectric modules based on skutterudite materials requires stable, low-resistance interfaces between segments operating at different temperature ranges. This study investigates the microstructure, thermoelectric performance, and thermal stability 
 The development of thermoelectric modules based on skutterudite materials requires stable, low-resistance interfaces between segments operating at different temperature ranges. This study investigates the microstructure, thermoelectric performance, and thermal stability of the following two joints: In0.4Co4Sb12/Co4Sb10.8Te0.6Se0.6 (n-type) and CeFe3Co0.5Ni0.5Sb12/In0.25Co3FeSb12 (p-type), fabricated by pulse plasma sintering (PPS). Scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) analyses confirmed the formation of well-bonded interfaces without pores or cracks. Aging at 773 K for 168 h did not result in morphological or chemical degradation, and phase composition remained unchanged according to X-ray diffraction (XRD). Surface Seebeck coefficient mapping and contact resistance measurements showed negligible changes after annealing, confirming electrical stability. To provide context for potential applications, theoretical energy conversion efficiencies were estimated based on measured thermoelectric properties, yielding 13.2% and 10.1% for the n- and p-type segmented legs, respectively. Additionally, measured coefficients of thermal expansion (CTE) indicated low mismatch between jointed materials, supporting good mechanical compatibility. The results demonstrate that the selected material combinations are thermally, chemically, and electrically stable and can be effectively used in segmented thermoelectric legs for intermediate-temperature applications.
Hybridizing thermoelectric generators (TEGs) with renewable energy systems offers a promising route to enhance energy efficiency. However, conventional bulk TEG modules are bulky and impractical for applications requiring lightweight and 
 Hybridizing thermoelectric generators (TEGs) with renewable energy systems offers a promising route to enhance energy efficiency. However, conventional bulk TEG modules are bulky and impractical for applications requiring lightweight and flexible designs, such as building-integrated systems. This study addresses this limitation by developing a thin film TEG using stoichiometric bismuth telluride (Bi₂Te₃) and antimony telluride (Sb₂Te₃) deposited on a glass substrate via radio frequency magnetron sputtering. The structural, morphological, and thermoelectric properties of the films were analyzed using XRD, FESEM, EDX, Hall effect, and Seebeck coefficient measurements, confirming their suitability for device fabrication. The fabricated TEG, consisting of 6 n-type Bi₂Te₃ and p-type Sb₂Te₃ pairs, achieved a maximum open-circuit voltage of 208.55 mV and power output of 0.54 ”W at a temperature difference of 125 K, with a maximum power per unit active planar area of 0.1 ”W cm⁻ÂČ. These results demonstrate the feasibility of thin film TEGs for integration into lightweight and compact energy-harvesting systems, highlighting their potential in renewable energy applications.
Thermoelectric materials have gained significant attention for energy harvesting and waste heat recovery, particularly in aerospace applications. The layered Ca 3 Co 4 O 9 structure, a member of the 
 Thermoelectric materials have gained significant attention for energy harvesting and waste heat recovery, particularly in aerospace applications. The layered Ca 3 Co 4 O 9 structure, a member of the misfit‐layered cobaltite family, has been extensively studied for its high thermoelectric performance. Herein, Ca 2.5 Ag 0.3 Sm 0.2 Co 4 O 9 ceramic materials are synthesized via the sol–gel method to enhance their thermoelectric properties. Various characterization techniques, including differential thermal analysis thermogravimetry, X‐ray diffraction, X‐ray Photoelectron Spectroscopy, scanning electron microscopy, and thermoelectric characterization, are employed to analyze the thermal, structural, and morphological properties of the synthesized materials. The thermoelectric properties are evaluated through the Seebeck coefficient, electrical resistivity, and power factor measurements. The incorporation of Ag and Sm as dopants improves the electrical conductivity and thermopower, making these materials suitable for aerospace thermoelectric systems.
Abstract Thermoelectric (TE) properties of monolayer tin selenide (SnSe) in the Pnma and Cmcm phases are investigated using density functional theory and semi-classical Boltzmann transport theory. The influence of uniaxial 
 Abstract Thermoelectric (TE) properties of monolayer tin selenide (SnSe) in the Pnma and Cmcm phases are investigated using density functional theory and semi-classical Boltzmann transport theory. The influence of uniaxial and biaxial strain on the electronic structure and transport properties is analyzed, with particular focus on symmetry preservation and valley convergence. Applying 5% biaxial compressive strain to the Cmcm phase enhances valley degeneracy and electronic transport, resulting in a figure-of-merit ( ZT ) reaching ∌4.61 at 900 K. In contrast, the Pnma phase exhibits relatively minor changes in thermoelectric performance under the same strain conditions. These results demonstrate that strain engineering can be an effective strategy to improve the thermoelectric efficiency of monolayer SnSe, particularly in the high-symmetry Cmcm phase.
The growing demand for compact, efficient, and eco friendly cooling solutions has driven research into integrating thermoelectric coolers (TECs) with solar photovoltaic (PV) systems, where solar irradiance variability impacts cooling 
 The growing demand for compact, efficient, and eco friendly cooling solutions has driven research into integrating thermoelectric coolers (TECs) with solar photovoltaic (PV) systems, where solar irradiance variability impacts cooling efficacy and energy efficiency. This challenge is addressed using DC-DC Buck-Boost converters whose performance is heavily influenced by control strategies such as Proportional Integral Derivative (PID) controllers employing tuning approaches that balance performance and prioritize disturbance rejection. This study investigates the implementation and performance of a DC-DC buck-boost converter in a solar photovoltaic and thermoelectric cooling (PV-TEC) system. Simulation-based analysis compared tuning methods for their ability to maintain thermal stability, reduce electrical input fluctuations, and enhance the TEC's Coefficient of Performance (COP). Results show that the PID controller significantly improves responsiveness and energy efficiency in dynamic solar conditions, achieving a 23% reduction in power consumption and a 36% increase in COP, highlighting the importance of adaptive control strategies.
Thermoelectricity has long been recognized as a transformative technology for power generation and cooling, owing to its capability to convert heat directly into electricity and vice versa, thereby facilitating cost-effective 
 Thermoelectricity has long been recognized as a transformative technology for power generation and cooling, owing to its capability to convert heat directly into electricity and vice versa, thereby facilitating cost-effective and environmentally friendly energy conversion. Following a period of modest activity, the field has experienced a remarkable resurgence since 2000, driven by significant advancements in the development of a diverse array of new materials and compounds, alongside enhanced capabilities for controlled nanostructuring. This rapid growth and the innovative breakthroughs observed over the past two decades can be largely attributed to a deeper understanding of the physical properties at the nanoscale. Among the various thermoelectric materials, nanostructured variants exhibit the highest potential for commercial application due to their unprecedented thermoelectric performance, which arises from substantial reductions in thermal conductivity. However, further advancements will not rely solely on nanostructuring; they will also necessitate novel electronic structure design concepts that require a comprehensive understanding of the complexities of electronic and phonon transport. These developments present significant opportunities for thermoelectric energy harvesting, power generation, and cooling applications. This article aims to summarize and elucidate the breakthroughs reported in recent years, discuss future avenues that integrate nanostructuring concepts with the rich electronic structures of novel materials, and provide a critical overview of the future directions in thermoelectric materials research. Additionally, it offers a comprehensive overview of state-of-the-art thermoelectric materials and devices and a summary of the challenges associated with transitioning these materials into practical devices.
The thermal transport and thermoelectric properties of anti-perovskite M 3 IO and M 4 I 2 O (M = K, Rb) were investigated using first-principles calculations combined with solution of 
 The thermal transport and thermoelectric properties of anti-perovskite M 3 IO and M 4 I 2 O (M = K, Rb) were investigated using first-principles calculations combined with solution of the Boltzmann transport equation. The two-phonon scattering channel was also considered. These structures formed M 6 O octahedra, accompanied by a rattling motion of the O atoms. They exhibit ultra-low lattice thermal conductivity, ranging from 0.30 to 0.89 W m -1 K −1 at room temperature. M 4 I 2 O demonstrates strong anisotropic thermal transport due to weaker bonding interactions along the zz direction, while M 3 IO shows isotropic thermal conductivity. Specifically, Rb 4 OI 2 has the lowest lattice thermal conductivity of 0.47 W m -1 K −1 along the xx direction and 0.30 W m -1 K −1 along the zz direction. Additionally, M 3 IO possesses low lattice thermal conductivity of 0.52 W m -1 K −1 , attributed to the softening behavior of the TA branch at the M and R points. The electronic structure of M 3 IO and M 4 OI 2 reveals a multi-valley phenomenon in the valence band, resulting in a large Seebeck coefficient under p-type doping. Our results indicate maximum thermoelectric figure of merit (ZT) values of 1.91 for p-type Rb 3 OI, and 1.41 for p-type Rb 4 OI 2 along the zz direction at 900 K. Rb 3 OI and Rb 4 OI 2 were proposed as potential p-type thermoelectric materials.
Lattice softening refers to reducing the lattice stiffness of materials by weakening the binding force between atoms, thereby changing the electron and phonon transport characteristics. The advantage of lattice softening 
 Lattice softening refers to reducing the lattice stiffness of materials by weakening the binding force between atoms, thereby changing the electron and phonon transport characteristics. The advantage of lattice softening compared to other strategies for optimizing the properties of thermoelectric materials is that it can significantly reduce the lattice thermal conductivity by reducing the sound velocity without significantly affecting the electrical properties. Moreover, lattice softening shows a wide range of application potential in other material fields, such as magnetostrictive materials and intermetallic alloys. However, systematic reviews on the causes, effects, and specific applications of lattice softening in thermoelectric materials are still limited. This review introduces the recent progress of lattice softening in thermoelectric materials, focusing on how to achieve it and its mechanism in optimizing thermoelectric performance. Through mechanical strain engineering, chemical doping, and phase transition strategies to achieve lattice softening, one could lower the phonon speed, reduce the lattice thermal conductivity, and optimize the Seebeck coefficient and conductivity. In the outlook section, the potential applications of lattice softening in sustainable energy technologies are explored.
Dipole–dipole interactions, while normally associated with polar materials, can indirectly affect lattice thermal conductivity by altering phonon dynamics and increasing anharmonicity. In this study, we look at the effect of 
 Dipole–dipole interactions, while normally associated with polar materials, can indirectly affect lattice thermal conductivity by altering phonon dynamics and increasing anharmonicity. In this study, we look at the effect of long-range dipole–dipole interactions in NbYPb (Y = Co, Rh, Ir) half-Heusler alloys using non-analytical corrections (NACs) in phonon calculations. The structural stability of the alloys is calculated using the Birch–Murnaghan equation of state, while phonon dispersion validates their dynamic stability. We calculate phonon lifetimes and lattice thermal conductivity using density functional perturbation theory and the Boltzmann transport equation, both with and without NAC. Our findings show that NAC affects phonon spectra through LO–TO splitting at the Γ-point, influencing lattice thermal conductivity. NAC specifically increases thermal conductivity by 1.86% in NbCoPb and 2.2% in NbIrPb but decreases it by 3.8% in NbRhPb due to variations in LO–TO mode coupling. Thermoelectric transport properties show that p-type NbCoPb has the highest power factor of 39 × 10−4 W/m K2 at 1000 K among the three alloys. Furthermore, size-dependent thermal conductivity estimates indicate that nanostructuring can significantly reduce lattice heat transport, hence increasing the thermoelectric figure of merit. These results provide new avenues for thermoelectric performance optimization and emphasize the significance of dipole–dipole interactions in controlling phonon transport in weakly polar half-Heusler compounds.
Thermoelectric generator (TEG) has emerged as a critical technology for automotive exhaust energy recovery, yet there is still a lack of reviews analyzing automotive TEG structure design and optimization methods 
 Thermoelectric generator (TEG) has emerged as a critical technology for automotive exhaust energy recovery, yet there is still a lack of reviews analyzing automotive TEG structure design and optimization methods simultaneously. Therefore, this review consolidates structure design and methods for improving thermoelectric conversion efficiency, focusing on three core components: thermoelectric module (TEM), heat exchanger (HEX), and heat sink (HSK). For TEM, research and development efforts have primarily centered on material innovation and structural optimization, with segmented, non-segmented, and multi-stage configurations emerging as the three primary structural types. HEX development spans external geometries, including plate, polygonal, and annular designs, and internal enhancements such as fin, heat pipe, metal foam, and baffle to augment heat transfer. HSK leverages active, passive, or hybrid cooling systems, with water-cooling designs prevalent in automotive TEG for cold-side thermal management. Optimization methods encompass theoretical analysis, numerical simulation, experimental testing, and hybrid methods, with strategies devised to balance computational efficiency and accuracy based on system complexity and resource availability. This review provides a systematic framework to guide the design and optimization of automotive TEG.
High-temperature thermoelectric generators (TEGs) have emerged as a key technology for improving fuel efficiency by recovering waste heat from automotive exhaust systems. While half-Heusler alloys are commonly used due to 
 High-temperature thermoelectric generators (TEGs) have emerged as a key technology for improving fuel efficiency by recovering waste heat from automotive exhaust systems. While half-Heusler alloys are commonly used due to their excellent thermoelectric properties and mechanical stability, their susceptibility to oxidation and high production costs pose challenges for long-term application. In contrast, ceramic-based thermoelectric materials, including cobalt oxides, perovskites, and doped zinc oxides, offer superior high-temperature stability, oxidation resistance, and environmental compatibility. This chapter explores the potential of ceramic thermoelectric materials as viable replacements for half-Heusler alloys in automotive TEGs, assessing their performance, stability, fabrication challenges, and integration strategies. Furthermore, it highlights recent research advancements, material enhancements, and future prospects for optimizing ceramic-based TEG efficiency in automotive applications.
Achieving high thermoelectric performance in two-dimensional (2D) transition metal dichalcogenides (TMDs) is crucial for energy utilization. In this study, we explored the electrical and thermal transport characteristics of ZrSe2 and 
 Achieving high thermoelectric performance in two-dimensional (2D) transition metal dichalcogenides (TMDs) is crucial for energy utilization. In this study, we explored the electrical and thermal transport characteristics of ZrSe2 and its Janus derivatives, ZrSeS and ZrSeS0.5Te0.5, by combining first-principles calculations with the semi-classical Boltzmann transport theory. The chemical, dynamical, and mechanical stabilities of these monolayers are confirmed by cohesive energy calculation, phonon band structure analysis, and elastic constant determination, in turn indicating their experimental feasibility. The introduction of S and Te substitutions in ZrSe2 induces significant phonon softening, leading to a reduction in group velocity and enhanced anharmonicity. Contrary to conventional results, Janus ZrSeS exhibits lower lattice thermal conductivity than the ZrSeS0.5Te0.5 system due to increased scattering rate and high absolute GrĂŒneisen parameter. ZrSeS0.5Te0.5 exhibits lower lattice thermal conductivity than pristine ZrSe2 monolayer owing to lower group velocity and strong phonon softening. Electronic transport analysis of Janus quasi-ternary system reveals a high-power factor in the p-type region, attributed to moderate Seebeck coefficient and the elevated electrical conductivity. Notably, ZrSeS0.5Te0.5 also demonstrates superior carrier mobility due to a conductive network formed by Zr–Se and Zr–Te bonds, facilitating efficient charge transport. The strong antibonding interaction between Zr and chalcogen atoms further enhances its thermoelectric efficiency. Our results demonstrate that ZrSeS0.5Te0.5 is a promising material for thermoelectric utilizations with a high thermoelectric figure of merit ZT ∌ 2.34 at a temperature of 1000 K for p-type, providing new insights into transport mechanisms in Janus quasi-ternary TMDs. The results suggest that phonon softening, conductive network formation, and optimal band alignment play key roles in enhancing thermoelectric efficiency. These findings pave an avenue for the fabrication of advanced thermoelectric materials utilizing Janus monolayers.
In this study, borophene and nickel phthalocyanine (NiPc): borophene nanocomposites were prepared using the sonication method. The NiPc: borophene nanocomposite was uniformly obtained as a 10-80 nm-sized spherically shaped particle. 
 In this study, borophene and nickel phthalocyanine (NiPc): borophene nanocomposites were prepared using the sonication method. The NiPc: borophene nanocomposite was uniformly obtained as a 10-80 nm-sized spherically shaped particle. Electrical conductivities (s) were measured as 3 × 10-13 Scm-1 and 9.5 × 10-9 Scm-1 for NiPc and the NiPc: borophene nanocomposite, respectively. The SEM image showed that borophene was homogeneously distributed in the NiPc matrix and increased the charge transport pathways. This is the main reason for a 106-fold increase in electrical conductivity. An indium tin oxide (ITO)/NiPc: borophene nanocomposite-based thermoelectric generator (TEG) was prepared and characterized. The Seebeck coefficients (S) were calculated to be 5 ÎŒVK-1 and 30 ÎŒVK-1 for NiPc and the NiPc: borophene nanocomposite, respectively. A positive Seebeck coefficient value for the NiPc: borophene showed the p-type nature of the nanocomposite. The power factors (PF = sS2) were calculated as 7.5 × 10-16 ÎŒW m-1 K-2 and 8.6 × 10-10 ÎŒW m-1 K-2 for NiPc and the NiPc: borophene nanocomposite, respectively. Compositing NiPc with borophene increased the power factor by ~106-fold. It has been concluded that the electrical conductivity and Seebeck coefficient of the NiPc: borophene material increases due to energy band convergence because of combining p-type NiPc with p-type borophene. Therefore, the NiPc: borophene nanocomposite is a promising material for TEG.
Abstract Achieving ultralow lattice thermal conductivity (Îș L ) in topological quantum materials with understanding of its origin poses a formidable challenge in material design. Members of the (Sb 2 
 Abstract Achieving ultralow lattice thermal conductivity (Îș L ) in topological quantum materials with understanding of its origin poses a formidable challenge in material design. Members of the (Sb 2 ) m (Sb 2 Te 3 ) n (m, n: integers) homologous series, Sb 2 Te 3 , SbTe, Sb 2 Te, and Sb 4 Te 3 , exhibit natural van der Waals‐like heterostructure and maintain topologically protected surface states. This offers a unique platform for probing the modulation of Îș L in conjunction with their local structure and lattice dynamics. We focus on three distinct members, SbTe, Sb 2 Te, and Sb 4 Te 3 , distinguished by different stacking sequences of Sb 2 bilayers (BLs) and Sb 2 Te 3 quintuple layers. Synchrotron X‐ray pair distribution function analysis reveals notable local structural signatures, distinguishing each compound. We observe a systematic Îș L reduction across the series along layered stacking direction, with Sb 4 Te 3 exhibiting the lowest Îș L (≈0.29 W m −1 K −1 at 300 K) due to enhanced phonon scattering from superlattice‐like heterostructure induced by BLs, while Sb 2 Te 3 having no BL retains the highest Îș L (≈0.87 W m −1 K −1 at 300 K). Phonon modes dominated by low‐energy shearing vibrations of Sb 2 BLs couple with acoustic phonons, reducing phonon group velocity and suppressing heat transport. This study underscores the interplay of structural modularity and low‐energy selective lattice vibrations in achieving ultralow Îș L in topological quantum materials.
Abstract Layered materials have attracted significant interest in the thermoelectric community due to their unique anisotropic crystal structures and exceptional planar electrical conductivity. However, their high intralayer lattice thermal conductivity 
 Abstract Layered materials have attracted significant interest in the thermoelectric community due to their unique anisotropic crystal structures and exceptional planar electrical conductivity. However, their high intralayer lattice thermal conductivity presents an obstacle for thermoelectric applications. This work proposes a rattling‐scatter strategy to reduce intralayer lattice thermal conductivity through the intercalation of organic molecules, as demonstrated with ethylenediamine (EDA) intercalated into black phosphorus (BP). Theoretical calculations reveal that this mechanism significantly enhances lattice anharmonicity and reduces group velocity, achieving a more than one order of magnitude decrease in intralayer lattice thermal conductivity. Experimental results validate these findings, revealing a significantly reduced thermal conductivity of 0.13 Wm −1 K −1 at 300 K in BP/EDA composites, which is only 1.45% of that in polycrystalline BP. Additionally, EDA intercalation distorts the BP structure, causing conduction band convergence around the Fermi level and enhancing electrical performance. The BP/EDA is predicted to have an impressive zT value of 0.53 at 300 K, a staggering 19 fold increase over pristine BP. This study demonstrates that organic‐molecule intercalation effectively induces rattling motion, providing a promising strategy to suppress lattice thermal conductivity and improve thermoelectric performance in layered materials, thereby offering valuable insights for thermoelectric material design.
We report thermoelectric properties of sintered samples of undoped, W-doped, and Sb-doped ReSTe crystallized in a cubic MoSBr-type structure. All samples exhibited p-type thermoelectric properties. ReSTe and Re0.993W0.007STe exhibited the 
 We report thermoelectric properties of sintered samples of undoped, W-doped, and Sb-doped ReSTe crystallized in a cubic MoSBr-type structure. All samples exhibited p-type thermoelectric properties. ReSTe and Re0.993W0.007STe exhibited the largest dimensionless figure of merit ZT, reaching 0.4 at 660 K. This high performance is attributed to a large power factor owing to the degenerate semiconducting state realized by the strong spin–orbit coupling and low lattice thermal conductivity of the sintered samples. Furthermore, electronic band dispersion of ReSTe is almost flat at the bottom of the conduction band, suggesting that n-type ReSTe is expected to exhibit much higher performance than p-type ReSTe.