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Silicon Carbide Semiconductor Technologies

Works Count: 61247

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Description

This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.

Keywords

Wide Bandgap Semiconductors; Reliability; Silicon Carbide; Power Devices; High-Temperature Electronics; IGBT Modules; GaN Power Devices; Thermal Management; Failure Modes; SiC Nanowires

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1968-09-15

D. W. Feldman , J. H. Parker , W. J. Choyke +1 more

Phonon dispersion curves for SiC have been constructed from first-order Raman scattering data. The method used is a new one that exploits the existence of polytypes. Excitation by an argon … Phonon dispersion curves for SiC have been constructed from first-order Raman scattering data. The method used is a new one that exploits the existence of polytypes. Excitation by an argon ion laser made possible the observation of nine one-phonon lines in $4H \mathrm{SiC}$, 16 lines in $15R$, and 14 lines in $21R$. The symmetry type of each phonon mode was determined by polarization analysis, and the modes were further classified by the use of a standard large zone. The three groups of one-phonon lines, together with 15 lines previously reported for $6H \mathrm{SiC}$, were then all assigned to their positions in a single large-zone plot, to yield a set of SiC phonon dispersion curves comparable with those obtained for other materials by neutron diffraction. The results verify the existence of a common phonon spectrum for all SiC polytypes in the axial direction. Longitudinal and transverse acoustic velocities are obtained from the dispersion curves, and are in good agreement with experimental values. Thus, optic modes in polytypes give information on acoustic properties. All SiC polytypes have in common a set of strong modes in which the Si and C sublattices vibrate against each other. The anisotropy of one of these modes varies with polytype in the same way as the $\frac{c}{a}$ axial ratios. Both the anisotropy and the $\frac{c}{a}$ ratio are related empirically to the percentage of hexagonal planes in the polytype stacking arrangement.

Semiconductor Power Devices

2011-01-01

Josef Lutz , Heinrich Schlangenotto , Uwe Scheuermann +1 more

Intrinsic SiC/SiO2 Interface States

1997-07-01

V. V. Afanas’ev , M. Baßler , Gerhard Pensl +1 more

The energy distribution of electron states at SiC/SiO2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy. A … The energy distribution of electron states at SiC/SiO2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy. A similar distribution of interface traps over the SiC bandgap is observed for different polytypes indicating a common nature of interfacial defects. Carbon clusters at the SiC/SiO2 interface and near-interfacial defects in the SiO2 are proposed to be responsible for the dominant portion of interface traps, while contributions caused by dopant-related defects and dangling bonds at the SiC surface are not observed.

Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics

2013-11-19

Huai Wang , Marco Liserre , Frede Blaabjerg +4 more

Power electronics has progressively gained an important status in power generation, distribution, and consumption. With more than 70% of electricity processed through power electronics, recent research endeavors to improve the … Power electronics has progressively gained an important status in power generation, distribution, and consumption. With more than 70% of electricity processed through power electronics, recent research endeavors to improve the reliability of power electronic systems to comply with more stringent constraints on cost, safety, and availability in various applications. This paper serves to give an overview of the major aspects of reliability in power electronics and to address the future trends in this multidisciplinary research direction. The ongoing paradigm shift in reliability research is presented first. Then, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-of-the-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation. Finally, the challenges and opportunities for achieving more reliable power electronic systems in the future are discussed.

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Survey on Reliability of Power Electronic Systems

2012-04-11

Yantao Song , Bingsen Wang

With wide-spread application of power electronic systems across many different industries, their reliability is being studied extensively. This paper presents a comprehensive review of reliability assessment and improvement of power … With wide-spread application of power electronic systems across many different industries, their reliability is being studied extensively. This paper presents a comprehensive review of reliability assessment and improvement of power electronic systems from three levels: 1) metrics and methodologies of reliability assessment of existing system; 2) reliability improvement of existing system by means of algorithmic solutions without change of the hardware; and 3) reliability-oriented design solutions that are based on fault-tolerant operation of the overall systems. The intent of this review is to provide a clear picture of the landscape of reliability research in power electronics. The limitations of the current research have been identified and the direction for future research is suggested.

Analytical loss model of power MOSFET

2006-03-01

Yuancheng Ren , Ming Xu , Jinghai Zhou +1 more

An accurate analytical model is proposed in this paper to calculate the power loss of a metal-oxide semiconductor field-effect transistor. The nonlinearity of the capacitors of the devices and the … An accurate analytical model is proposed in this paper to calculate the power loss of a metal-oxide semiconductor field-effect transistor. The nonlinearity of the capacitors of the devices and the parasitic inductance in the circuit, such as the source inductor shared by the power stage and driver loop, the drain inductor, etc., are considered in the model. In addition, the ringing is always observed in the switching power supply, which is ignored in the traditional loss model. In this paper, the ringing loss is analyzed in a simple way with a clear physical meaning. Based on this model, the circuit power loss could be accurately predicted. Experimental results are provided to verify the model. The simulation results match the experimental results very well, even at 2-MHz switching frequency.

Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance

2012-09-12

Jianjing Wang , Henry Shu-Hung Chung , River Tin-Ho Li

This paper presents a comprehensive study on the influences of parasitic elements on the MOSFET switching performance. A circuit-level analytical model that takes MOSFET parasitic capacitances and inductances, circuit stray … This paper presents a comprehensive study on the influences of parasitic elements on the MOSFET switching performance. A circuit-level analytical model that takes MOSFET parasitic capacitances and inductances, circuit stray inductances, and reverse current of the freewheeling diode into consideration is given to evaluate the MOSFET switching characteristics. The equations derived for emulating MOSFET switching transients are assessed graphically, which, compared to results obtained merely from simulation or parametric study, can offer better insight into where the changes in switching performance lie when the parasitic elements are varied. The analysis has been successfully substantiated by the experimental results of a 400 V, 6 A test bench. A discussion on the physical meanings behind these parasitic effect phenomena is included. Knowledge about the effects of parasitic elements on the switching behavior serves as an important basis for the design guidelines of fast switching power converters.

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

1983-03-01

Shigehiro Nishino , J. A. Powell , Hannes Will

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is … A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 μm thick and several cm2 in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 cm2/Vs.

Selected failure mechanisms of modern power modules

2002-04-01

Mauro Ciappa

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

2011-12-07

Yvan Avenas , Laurent Dupont , Zoubir Khatir

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, … This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.

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A Survey of Wide Bandgap Power Semiconductor Devices

2013-06-14

José del R. Millán , Philippe Godignon , X. Perpiñà +2 more

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of … Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

Raman Investigation of SiC Polytypes

1997-07-01

Satοru Nakashima , Hisatomo Harima

It has been recognized that Raman scattering spectroscopy is a powerful tool to characterize SiC crystals non-destructively. We review recent significant developments in the use of Raman scattering to study … It has been recognized that Raman scattering spectroscopy is a powerful tool to characterize SiC crystals non-destructively. We review recent significant developments in the use of Raman scattering to study structural and electronic properties of SiC crystals. The areas to be discussed in the first part include polytype identification, evaluation of stacking disorder and ion-implantation damages, and stress evaluation. The Raman scattering by electronic transitions is discussed in the second part of this article. We concentrate on the plasmon LO-phonon coupled modes whose spectral profiles are used to evaluate the carrier concentration and mobility. Anisotropic electronic properties of α-SiC and characteristics of heavily doped crystals are discussed. Semiconductor-to-metal transition and Fano interference effect are also treated.

LEED and Auger electron observations of the SiC(0001) surface

1975-03-01

A.J. Van Bommel , J.E. Crombeen , A. van Tooren

Silicon carbide and its use as a radiation detector material

2008-08-11

F. Nava , G. Bertuccio , A. Cavallini +1 more

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature … We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation.

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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

1996-10-01

Jeff B. Casady , Wayne Johnson

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

2014-12-04

Ui‐Min Choi , Frede Blaabjerg , Kyo‐Beum Lee

Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of … Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

2013-08-16

Niall Oswald , Philip Anthony , Neville McNeill +1 more

Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to … Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.

Material science and device physics in SiC technology for high-voltage power devices

2015-03-23

Tsunenobu Kimoto

Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent … Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

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Step-controlled epitaxial growth of SiC: High quality homoepitaxy

1997-08-01

Hiroyuki Matsunami , Tsunenobu Kimoto

Power semiconductor device figure of merit for high-frequency applications

1989-10-01

B. Jayant Baliga

A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the … A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the square root of the operating frequency and approximately in proportion to the output power. By relating the device power dissipation to the intrinsic material parameters, it is shown that the power loss can be reduced by using semiconductors with larger mobility and critical electric field for breakdown. Examination of data in the literature indicates that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

1994-01-01

T. Paul Chow , R. Tyagi

This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have … This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (Ga/sub x/In/sub 1-x/N, Al/sub x/In/sub 1-x/N, Al/sub x/Ga/sub 1-x/N, and (AlN)/sub x/(SiC)/sub 1-x/) offer several orders of magnitude improvement in the on-resistance and in the potential for successful operation at higher temperatures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

An assessment of wide bandgap semiconductors for power devices

2003-05-01

J.L. Hudgins , G. Simin , Enrico Santi +1 more

An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. … An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. It is shown that the optimal choice for uni-polar devices is clearly GaN. It is further shown that the future optimal choice for bipolar devices is C (diamond) owing to the large bandgap, high thermal conductivity, and large electron and hole mobilities. A new expression relating the critical electric field for breakdown in abrupt junctions to the material bandgap energy is derived and is further used to derive new expressions for specific on-resistance in power semiconductor devices. These new expressions are compared to the previous literature and the efficacy of specific power devices, such as heterojunction MOSFETs, using GaN are discussed.

Status and prospects for SiC power MOSFETs

2002-04-01

James A. Cooper , M. R. Melloch , Ranbir Singh +2 more

SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the … SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.

Silicon carbide benefits and advantages for power electronics circuits and systems

2002-06-01

Ahmed Elasser , T. Paul Chow

Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal … Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications.

A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters

2009-01-01

Bin Lü , Santosh Kumar Sharma

This paper presents a survey on existing methods for fault diagnosis and protection of insulated gate bipolar transistors with special focus on those used in three-phase power inverters. Twenty-one methods … This paper presents a survey on existing methods for fault diagnosis and protection of insulated gate bipolar transistors with special focus on those used in three-phase power inverters. Twenty-one methods for open-circuit faults and ten methods for short-circuit faults are evaluated and summarized, based on their performance and implementation efforts. The gate-misfiring faults and their diagnostic methods are also briefly discussed. Finally, the promising methods are recommended for future work.

SiC devices: physics and numerical simulation

1994-06-01

M. Ruff , H. Mitlehner , R. Helbig

The important material parameters for 6H silicon carbide (6H-SiC) are extracted from the literature and implemented into the 2-D device simulation programs PISCES and BREAKDOWN and into the 1-D program … The important material parameters for 6H silicon carbide (6H-SiC) are extracted from the literature and implemented into the 2-D device simulation programs PISCES and BREAKDOWN and into the 1-D program OSSI Simulations of 6H-SiC p-n junctions show the possibility to operate corresponding devices at temperatures up to 1000 K thanks to their low reverse current densities. Comparison of a 6H-SiC 1200 V p-n/sup -/-n/sup +/ diode with a corresponding silicon (Si) diode shows the higher switching performance of the 6H-SiC diode, while the forward power loss is somewhat higher than in Si due to the higher built-in voltage of the 6H-SiC p-n junction. This disadvantage can be avoided by a 6H-SiC Schottky diode. The on-resistances of Si, 3C-SiC, and 6H-SiC vertical power MOSFET's are compared by analytical calculations. At room temperature, such SiC MOSFET's can operate up to blocking capabilities of 5000 V with an on-resistance below 0.1 /spl Omega/cm/sup 2/, while Si MOSFET's are limited to below 500 V. This is checked by calculating the characteristics of a 6H-SiC 1200 V MOSFET with PISCES. In the voltage region below 200 V, Si is superior due to its higher mobility and lower threshold voltage. Electric fields in the order of 4/spl times/10/sup 6/ V/cm occur in the gate oxide of the mentioned 6H-SiC MOSFET as well as in a field plate oxide used to passivate its planar junction. To investigate the high frequency performance of SiC devices, a heterobipolartransistor with a 6H-SiC emitter is considered. Base and collector are assumed to be out of 3C-SiC. Frequencies up to 10 GHz with a very high output power are obtained on the basis of analytical considerations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001-04-01

Gil Yong Chung , C. C. Tin , John R. Williams +7 more

Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band … Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2/spl times/10/sup 13/ to 2/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/ following anneals in nitric oxide at 1175/spl deg/C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm/sup 2//V-s following the passivation anneals.

Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities

2013-06-01

Huai Wang , Marco Liserre , Frede Blaabjerg

A new era of power electronics was created with the invention of the thyristor in 1957. Since then, the evolution of modern power electronics has witnessed its full potential and … A new era of power electronics was created with the invention of the thyristor in 1957. Since then, the evolution of modern power electronics has witnessed its full potential and is quickly expanding in the applications of generation, transmission, distribution, and end-user consumption of electrical power. The performance of power electronic systems, especially in terms of efficiency and power density, has been continuously improved by the intensive research and advancements in circuit topologies, control schemes, semiconductors, passive components, digital signal processors, and system integration technologies.

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An Industry-Based Survey of Reliability in Power Electronic Converters

2011-03-15

Shaoyong Yang , A.T. Bryant , Philip Mawby +3 more

A questionnaire survey was carried out to determine the industrial requirements and expectations of reliability in power electronic converters. The survey was subjective and conducted with a number of high-profile … A questionnaire survey was carried out to determine the industrial requirements and expectations of reliability in power electronic converters. The survey was subjective and conducted with a number of high-profile semiconductor manufacturers, integrators, and users in the aerospace, automation, motor drive, utility power, and other industry sectors. According to the survey, power semiconductor devices ranked the most fragile components. It was concluded that main stresses were from the environment, transients, and heavy loads, which should be considered during power electronic system design and normal operation. This paper has also highlighted that there is a significant need identified by the responders for better reliability-monitoring methods and indicators.

Modeling and simulation of insulated-gate field-effect transistor switching circuits

1968-09-01

H. Shichman , D.A. Hodges

A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of … A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.

A Bidirectional Isolated DC–DC Converter as a Core Circuit of the Next-Generation Medium-Voltage Power Conversion System

2007-03-01

Shigenori Inoue , Hirofumi Akagi

This paper describes a bidirectional isolated dc-dc converter considered as a core circuit of 3.3-kV/6.6-kV high-power-density power conversion systems in the next generation. The dc-dc converter is intended to use … This paper describes a bidirectional isolated dc-dc converter considered as a core circuit of 3.3-kV/6.6-kV high-power-density power conversion systems in the next generation. The dc-dc converter is intended to use power switching devices based on silicon carbide (SiC) and/or gallium nitride, which will be available on the market in the near future. A 350-V, 10-kW and 20 kHz dc-dc converter is designed, constructed and tested. It consists of two single-phase full-bridge converters with the latest trench-gate insulated gate bipolar transistors and a 20-kHz transformer with a nano-crystalline soft-magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full-bridge converters. The overall efficiency from the dc-input to dc-output terminals is accurately measured to be as high as 97%, excluding gate drive and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC-based power switching devices. Loss analysis clarifies that the use of SiC-based power devices may bring a significant reduction in conducting and switching losses to the dc-dc converter. As a result, the overall efficiency may reach 99% or higher

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

1993-03-01

M. Bhatnagar , B. Jayant Baliga

The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the output … The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the output characteristics of the devices are calculated and compared with those of Si devices. It is found that due to very low drift region resistance, 5000-V SiC Schottky rectifiers and power MOSFETs can deliver on-state current density of 100 A/cm/sup 2/ at room temperature with a forward drop of only 3.85 and 2.95 V, respectively. Both devices are expected to have excellent switching characteristics and ruggedness due to the absence of minority-carrier injection. A thermal analysis shows that 5000-V, 6H-, and 3C-SiC MOSFETs and Schottky rectifiers would be approximately 20 and 18 times smaller than corresponding Si devices, and that operation at higher temperatures and at higher breakdown voltages than conventional Si devices is possible. Also, a significant reduction in the die size is expected.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

2011-02-11

Vanessa Smet , F. Forest , J.-J. Huselstein +4 more

This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with … This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C) and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

2010-05-12

Shaoyong Yang , Dawei Xiang , Angus Bryant +3 more

Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. … Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

Simple analytical and graphical methods for carrier-based PWM-VSI drives

1999-01-01

Ahmet M. Hava , R.J. Kerkman , T.Α. Lipo

This paper provides analytical and graphical methods for the study, performance evaluation and design of the modern carrier-based pulse width modulators (PWMs), which are widely employed in PWM voltage-source inverter … This paper provides analytical and graphical methods for the study, performance evaluation and design of the modern carrier-based pulse width modulators (PWMs), which are widely employed in PWM voltage-source inverter (VSI) drives. Simple techniques for generating the modulation waves of the high-performance PWM methods are described. The two most important modulator characteristics-the current ripple and the switching losses-are analytically modeled. The graphical illustration of these often complex multivariable functions accelerate the learning process and help one understand the microscopic (per-carrier cycle) and macroscopic (per fundamental cycle) behavior of all the modern PWM methods. The analytical formulae and graphics are valuable educational tools. They also aid the design and implementation of the high-performance PWM methods.

High-temperature electronics - a role for wide bandgap semiconductors?

2002-06-01

Philip G. Neudeck , Robert S. Okojie , Liang-Yü Chen

The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears … The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

2010-09-07

J. Biela , Mario Schweizer , S. Waffler +1 more

Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known … Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.

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Silicon carbide MEMS for harsh environments

1998-01-01

Mehran Mehregany , Christian A. Zorman , N. Rajan +1 more

Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review … Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current stare of SiC MEMS devices and issues facing future progress are presented.

Infrared Properties of Hexagonal Silicon Carbide

1959-01-01

W. G. Spitzer , D. A. Kleinman , D. Walsh

Infrared transmission and reflectivity measurements from 1 to 25 \ensuremath{\mu} (microns) have been made on several samples of green alpha (hexagonal) SiC. The residual ray bands have been observed for … Infrared transmission and reflectivity measurements from 1 to 25 \ensuremath{\mu} (microns) have been made on several samples of green alpha (hexagonal) SiC. The residual ray bands have been observed for the ordinary and extraordinary rays. The resonance frequencies are 2.380\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{sec}}^{\ensuremath{-}1}$ (12.60 \ensuremath{\mu}) and 2.356\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{sec}}^{\ensuremath{-}1}$ (12.73 \ensuremath{\mu}), respectively. From the reflectivity the high-frequency dielectric constant is found to be 6.7. A careful analysis shows that the residual ray bands can be fitted within experimental error by the classical dispersion theory within the correct choice of the dispersion parameters. From the parameters the value 10.0 is obtained for the low-frequency dielectric constant. The effective charge is $0.94e$. Complete description of the residual ray band for the extraordinary ray required, in addition to the main resonance, a weak resonance at 2.647\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{sec}}^{\ensuremath{-}1}$ (11.33 \ensuremath{\mu}). A study on the effects of several different surface treatments shows the reflectivities reported here are an intrinsic property of the crystal. The room-temperature absorption coefficient as a function of wavelength in the range 1 to 10 \ensuremath{\mu} has been determined from transmission measurements. A number of weak lattice bands are observed between 5 and 10 \ensuremath{\mu}.

Reliability of Capacitors for DC-Link Applications in Power Electronic Converters—An Overview

2014-02-25

Huai Wang , Frede Blaabjerg

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this … DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications.

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Review of Silicon Carbide Power Devices and Their Applications

2017-01-17

Xu She , Alex Q. Huang , Óscar Lucía +1 more

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC … Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

Fundamentals of Power Semiconductor Devices

2008-01-01

B. Jayant Baliga

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2017-12-02

Fabrizio Roccaforte , Patrick Fiorenza , Giuseppe Greco +4 more

Studies on silicon carbide

1947-02-01

Lewis S. Ramsdell

An Overview of Artificial Intelligence Applications for Power Electronics

2020-09-18

Shuai Zhao , Frede Blaabjerg , Huai Wang

This article gives an overview of the artificial intelligence (AI) applications for power electronic systems. The three distinctive life-cycle phases, design, control, and maintenance are correlated with one or more … This article gives an overview of the artificial intelligence (AI) applications for power electronic systems. The three distinctive life-cycle phases, design, control, and maintenance are correlated with one or more tasks to be addressed by AI, including optimization, classification, regression, and data structure exploration. The applications of four categories of AI are discussed, which are expert system, fuzzy logic, metaheuristic method, and machine learning. More than 500 publications have been reviewed to identify the common understandings, practical implementation challenges, and research opportunities in the application of AI for power electronics. This article is accompanied by an Excel file listing the relevant publications for statistical analytics.

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High-performance SiC superjunction MOSFET with integrated high-k MOS channel diode for optimized switching characteristics and high-temperature robustness

2025-06-25

Chengxi Ding , Ying Guo , Qimin Huang +3 more | Journal of Power Electronics

Thermo-mechanical analysis on 10 kV SiC-MOSFETs to improve the reliability of solder layers

2025-06-24

Masaki Takahashi , Zhongchao Sun , Akihiko Watanabe +3 more | Microelectronics Reliability

Condition monitoring for detection of humidity-induced failures in control electronics of power converters

2025-06-24

Florian Felix Sehr , Ştefan Wagner , A. Schulz +1 more | Microelectronics Reliability

The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

2025-06-23

T. I. Milenov , V Mehandzhiev , P. M. Rafailov +7 more | Applied Sciences

We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH4 in H2 at 1135 °C. The experiments were conducted … We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH4 in H2 at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase deposition times of 3, 5, 20, 60, and 90 min on Si(111) with or without native oxide, following established protocols. Our studies show that either predominantly crystalline SiC or a mixture of SiC and Si–O/Si–O–C glass forms on Si substrates significantly doped with carbon and oxygen, depending on the presence or absence of native oxide. The thickness of the SiC film ranges from approximately 5–6 nm for films synthesized in 3 min to over 15 nm for those synthesized in 90 min, while the size of the crystal grains varies from a few to 110 nm depending on the synthesis duration. The findings suggest that the complex composition of the thin films and the region beneath them can more effectively compensate for the differences in lattice parameters and thermal expansion coefficients between the SiC film and the Si substrate; thus, this method is promising for depositing intermediate thin films of SiC on Si substrates.

Investigation into the performance and surge current robustness of 1200V SiC MOSFETs with different JFET doping designs

2025-06-23

Yuhan Duan , Jiuyang Tang , Pan Liu +1 more | Materials Science in Semiconductor Processing

MTBF-PoL Reliability Evaluation and Comparison Using Prediction Standard MIL-HDBK-217F vs. SN 29500

2025-06-23

Dan Butnicu , Gabriel Bonteanu | Electronics

In the design of military, automotive, medical, space, and professional equipment, it is essential to demonstrate that devices can operate for a specific duration with a given level of confidence. … In the design of military, automotive, medical, space, and professional equipment, it is essential to demonstrate that devices can operate for a specific duration with a given level of confidence. Reliability must be considered in the design process, which can involve component selection, component testing, and mitigation techniques such as redundancy and forward error correction (FEC). In modern DC–DC converters, a higher level of reliability is now a mandatory requirement—the ISO 26262, for example, acts as the guidance to provide the appropriate standardized requirements, processes and risk based approach, and it determines integrity levels (known as automotive safety integrity levels or ASILs). The purpose is to reduce risks caused by systematic and random failures to an appropriate level of acceptance. Since the release of MIL-HDBK-217F Notice 2 in 1995, newer standards for predicting failure rates have emerged in the electronic systems reliability market. These updated standards were introduced to address the limitations of the older standards, particularly in relation to advanced component technologies. Numerous studies have shown that the output capacitor bank is one of the most critical components concerning reliability. This work focuses on calculating the failure rates of an output capacitor bank and a MOSFET transistor pair used in a high-current, low-voltage buck converter. The failure rates are calculated using both the latest prediction standard, SN 29500, and the previous MIL-HDBK standard. This comparison serves as a valuable tool for selecting the output capacitor during the early stages of design. Both simulations and experimental setups were employed to measure the temperatures of the components. The SN 29500 standard is particularly beneficial for components operating in harsh environments, as it provides up-to-date failure rate data and stress models. The environmental conditions for the components were defined using a standard point of load (PoL) buck converter for both calculation methods. Results are compared by considering the impact of component temperature and by applying specific parameters such as reference and operating conditions. This kind of comparison is useful for circuit designers, especially in the field of Power electronics when the concept of designing with reliability in mind is adopted.

Model prediction-based switch open-circuit fault diagnosis and localization for MMCs

2025-06-23

Zehao Liu , Lan Xiao | Journal of Power Electronics

Development of medium voltage single‐phase solid‐state transformer for high‐speed railway vehicles: Reduced scale verification results

2025-06-21

Donguk Kim , Jin‐Hyuk Park , Seunghwan Lee +1 more | High Voltage

Abstract This paper presents a high‐power‐density solid‐state transformer (SST) designed for 25 kV alternative current railway applications, delivering a 3 kV direct current output to traction inverters. The SST is … Abstract This paper presents a high‐power‐density solid‐state transformer (SST) designed for 25 kV alternative current railway applications, delivering a 3 kV direct current output to traction inverters. The SST is composed of sub‐modules with the adoption of 1.7 kV insulated gate bipolar transistor and SiC metal oxide field effect transistor (MOSFET) in an input‐series–output‐series structure, providing higher power density than conventional topologies that rely on high‐voltage switches (>1.7 kV). Because these high‐voltage SiC MOSFETs are still expensive and not fully commercialised, the proposed approach offers a more cost‐effective alternative. A total of 42 converter cells ensures a highly modular and scalable design, with precise synchronisation and high‐speed control achieved through an EtherCAT‐based communication network. Additionally, a distributed control algorithm is introduced, mitigating excessive dependence on the communication link for module‐level operations. The effectiveness of the entire system—including the design and control schemes—has been experimentally verified, ranging from individual converter cells to a reduced SST prototype of up to three sub‐modules. These results confirm the feasibility and advantages of the proposed SST in terms of power density, cost efficiency and reliability for railway traction applications.

Research on the Efficiency of Silicon Carbide Three‐Phase AC/DC Converter Under the Influence of Miller Effect

2025-06-21

Kai Zhou , Zheng Li , Shuchun Gao +1 more | International Journal of Circuit Theory and Applications

ABSTRACT SiC MOSFETs are widely used in AC/DC converters of electric vehicle. The Miller effect is an important cause of switching losses in SiC MOSFETs. This article focuses on all‐silicon … ABSTRACT SiC MOSFETs are widely used in AC/DC converters of electric vehicle. The Miller effect is an important cause of switching losses in SiC MOSFETs. This article focuses on all‐silicon carbide three‐phase voltage source rectifier (VSR) AC/DC converter. A series of studies have been conducted on the mechanism of SiC MOSFET losses and the causes of losses in the SiC three‐phase VSR. Based on a detailed analysis of the switching process of SiC MOSFETs, a high‐frequency switching model affected by Miller effect and device parasitic parameters is established. According to the model, the influence of various parameter changes on the Miller platform and switching losses under different driving modes is further discussed. A dual‐pulse test platform is built to verify the correctness of the model and the rationality of the analysis. On this basis, a steady‐state loss model of a three‐phase VSR under space vector pulse width modulation (SVPWM) is established. Finally, a prototype of a three‐phase VSR is designed and a test platform is built to experimentally verify the model. The output efficiency of the converter during closed‐loop steady‐state operation under multiple parameter changes is tested, and the experimental results are analyzed to provide suggestions for high‐frequency SiC MOSFET drive design.

A fault detection method based on active injection using dual active bridge converter in photovoltaic DC integration system

2025-06-21

Jiayi Yang , Guobing Song , Ruidong Xu +2 more | Electric Power Systems Research

The Electronic Properties of Magnesium, Zinc, Scandium Substitutional Impurities and their Complexes in 4HSiC

2025-06-21

Giovanni Alfieri , Elizabeth Buitrago , Ruggero Micheletto | physica status solidi (b)

The study of acceptor impurities is of great technological interest for silicon carbide (SiC). First, impurities that can compensate n‐type dopants can be an alternative to vanadium for the formation … The study of acceptor impurities is of great technological interest for silicon carbide (SiC). First, impurities that can compensate n‐type dopants can be an alternative to vanadium for the formation of semi‐insulating SiC films. Second, similarly to diamond, substitutional acceptors and their complexes might play a role in quantum technology. For this reason, a first‐principles study of the electronic properties of two divalent (Mg, Zn) and one trivalent (Sc) impurities is performed. The generalized gradient approximation is employed and the bandgap energy underestimation is overcome by a posteriori corrections. It is found that, with the exception of Mg, all of the investigated defects, substitutional and complexed with either intrinsic defects or n‐type dopants, give rise to donors (acceptors) close to the edge of the valence (conduction) band. In addition, N‐related complexes have the lowest formation energy and are energetically stable, meaning that such defects might arise already during growth. The results are then discussed in the light of the previous experimental and theoretical studies, found in the literature.

A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver

2025-06-21

Shiping Chen , Zhanqing Yu , Jiaxu Shi +4 more | High Voltage

Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units … Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes. The current‐source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits (IC). The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division, power sequencing, and chip parameter specifications. However, existing high‐side (HS) driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal‐oxide‐semiconductor compatibility. To address these challenges, a novel HS driving topology based on floating linear regulators is proposed. It can achieve synchronised control of multi‐channel floating power transistors while supporting 100% duty cycle continuous conduction. The proposed GDMIC reduces the three independent HS power supplies to a single multiplexed topology, significantly decreasing circuit complexity. Experimental results validate the feasibility and performance of a 4‐in gate driver prototype based on IGCT current‐source management IC, demonstrating significant advantages in reducing the number of components, enhancing device reliability, and simplifying development. The proposed GDMIC offers an innovative development path for future high‐power IGCT drivers.

Formation Mechanisms of Polytype-Induced Parallel Slits in Off-Axis 4H-SiC Crystals

2025-06-20

Binjie Xu , Qinqin Shao , Lingmao Xu +4 more | Crystal Growth & Design

Post-implantation annealing effects of Al-implanted p-type junction on specific contact resistance and temperature coefficient of resistance in 4H-SiC metal‐oxide‐semiconductor field effect transistors

2025-06-20

Kyeong-Keun Choi , Seong-Jeen Kim , Sungkyu Kim +3 more | Materials Science in Semiconductor Processing

Thermo-electrical reliability of power MOSFETs influenced by packaging architecture in stack-die and single-die configurations

2025-06-20

Y.B. Jang | Microelectronics Reliability

Research on Improving the Avalanche Current Limit of Parallel SiC MOSFETs

2025-06-20

Hua Mao , Bao‐Hsien Wu , Xinsheng Lan +3 more | Electronics

The transient overvoltage caused by coupling of loop inductance during rapid turn off of a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) can easily induce avalanche breakdown. Meanwhile, the instantaneous … The transient overvoltage caused by coupling of loop inductance during rapid turn off of a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) can easily induce avalanche breakdown. Meanwhile, the instantaneous high-density heat flux generated by energy dissipation can create significant electrothermal coupling stress, potentially leading to device failure under severe conditions. To address the issue that the multi-chip parallel structure of power modules cannot linearly enhance avalanche withstand capability, an innovative device screening method based on parameter matching is proposed in this paper. The effectiveness of the proposed solution is verified through experiments, with the total current limit of dual-tube parallel devices and three-tube parallel devices achieving 1.9 times and 2.4 times that of single-tube devices, respectively. This research is of great significance for improving safe and reliable operation of the system.

Effect of Operating Ambient Temperatures on Degradation of Solder Joints in IGBT Power Module

2025-06-19

Sunday E. Nebo , Emeka H. Amalu , David Hughes | Journal of Electronic Materials

Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC

2025-06-19

Marilena Vivona , Isabel Streicher , Lutz Kirste +5 more | Materials Science in Semiconductor Processing

Life Cycle Profile Development for Product Reliability Assessment

2025-06-19

A. Raghu Ram , Diganta Das | Quality and Reliability Engineering International

ABSTRACT The life cycle profile (LCP) is a catalog of all the expected loads a given product experiences across its lifetime, from the completion of product manufacture to the end … ABSTRACT The life cycle profile (LCP) is a catalog of all the expected loads a given product experiences across its lifetime, from the completion of product manufacture to the end of operation and removal from service. This paper outlines a procedure for developing an LCP, including cataloging estimates of the loads the product experiences over its lifetime. This work also provides methodologies for accounting for variations in the LCP and resources for estimating, identifying, and modeling different loads in each life cycle step. Understanding the LCP and the loads that act on the product during its lifetime allows for evaluating its ability to satisfy its reliability requirements. Validating the product's reliability results in more confidence in the product and improves the credibility of the entity developing the product. This approach is exemplified by the exercise of developing an LCP for a discrete insulated gate bipolar transistor (IGBT) used by a home appliances manufacturer. Finally, the paper provides a sample approach for developing a qualification test procedure using the LCP.

On‐State Current Increasing Structure of Source‐Connected Polarization Superjunction Transistor

2025-06-19

Eito Kokubo , Hirotaka Watanabe , Manato Deki +4 more | physica status solidi (a)

A structure is proposed for increasing the on‐state current in a polarization superjunction (PSJ) field effect transistor (FET) using gallium nitride (GaN). A PSJ FET can achieve a high breakdown … A structure is proposed for increasing the on‐state current in a polarization superjunction (PSJ) field effect transistor (FET) using gallium nitride (GaN). A PSJ FET can achieve a high breakdown voltage, but in the simplest PSJ FET structure, the PSJ structure and the gate are integrated, so the input capacitance will increase, which is disadvantageous for high‐speed switching. Therefore, a structure in which the PSJ structure is connected to the source electrode has been proposed. By connecting the PSJ structure to the source, the capacitance of the PSJ structure is on the output side, where it has little effect on switching. However, those structures suffer from reduced on‐state current. To address this issue, a structure is investigated that increases the on‐state current because the PSJ structure is etched into a comb shape, and a current path in the on‐state is provided separately from the PSJ structure. It is confirmed that the on‐state current can be improved by etching the PSJ region. The V BD · I D,sat product is calculated to evaluate the effectiveness of the comb‐shaped PSJ structure. It is possible to improve the V BD ·I D, sat product by 2.17 times compared to the PSJ FET without PSJ structure etching.

Characteristics and propagation of switching-induced stress waves in SiC MOSFET power modules

2025-06-18

Siqi Huang , Fan Lü , Heng Qian +3 more | Frontiers in Energy Research

Switching-induced stress waves (SSW) are recognized as a promising non-invasive technology for real-time monitoring of power module packaging failures, though limited by the lack of a comprehensive understanding of their … Switching-induced stress waves (SSW) are recognized as a promising non-invasive technology for real-time monitoring of power module packaging failures, though limited by the lack of a comprehensive understanding of their characteristics and propagation mechanisms. In this study, a dedicated SSW detection platform was developed for SiC MOSFET power modules, where the mechanical wave nature was verified through time-delay analysis. Dominant frequency components at 150 kHz and 270 kHz were identified using both piezoelectric ceramic and PVDF sensors. Experimental investigations further demonstrated that the time-domain parameters of SSW were predominantly influenced by bus voltage (U DC ), followed by load current (I R ), whereas principal frequency components remained stable across operational conditions. Propagation effects through the module were systematically analyzed via finite element modeling, revealing a 5.82% increase in signal amplitude and 5.88% spectral bandwidth expansion after transmission. These results confirm that sensor-captured signals can be effectively equated to original chip vibrations in defect-free propagation paths.

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

2025-06-18

Peiran Wang , Chenglong Li , Chenkai Deng +7 more | Nanomaterials

In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD … In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode when the device is utilized as a freewheeling diode, eliminating bipolar degradation. The adjustment of SBD position provides an alternative path for reverse conduction and mitigates the electric field distribution near the bottom source trench region. As a result of the Schottky contact adjustment, the reverse conduction characteristics are less influenced by the source oxide thickness, and the breakdown voltage (BV) is largely improved from 800 V to 1069 V. The gate-to-drain capacitance is much lower due to the removal of the bottom oxide, bringing an improvement to the turn-on switching rise time from 2.58 ns to 0.68 ns. These optimized performances indicate the proposed structure with both SBD and MCD has advantages in switching and breakdown characteristics.

Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices

2025-06-14

Kazutoshi Kojima , Akira Nakajima , Hisashi Yamada +1 more | Materials Science in Semiconductor Processing

Impedance modeling and parameter extraction of elastically crimped IGBT devices based on differential evolution

2025-06-13

Can Li , Bing Chen , Wei Yan +2 more | Journal of Power Electronics

From IGBT to GaN implementation in phase-shifted full-bridge converter

2025-06-12

Marek Pástor , Daniel Gordan , Maxwell Chiemeka Loveth | Electrical Engineering

Analysis of the Effectiveness of Silicon Carbide Usage in the Jakarta Metro Traction System Using Matlab

2025-06-10

Mohamad Angger Pamungkas Wijaya , Chairul Gagarin Irianto , Teguh Arifianto | Journal of Railway Transportation and Technology

Switching inverter technology for converting DC to AC using Insulated Gate Bipolar Transistors (IGBTs) has been implemented in the propulsion system of the Jakarta Metro. However, with advancements in power … Switching inverter technology for converting DC to AC using Insulated Gate Bipolar Transistors (IGBTs) has been implemented in the propulsion system of the Jakarta Metro. However, with advancements in power electronics, a newer technology—Silicon Carbide (SiC)—has emerged, offering the potential to reduce switching power losses by up to 30%. The effectiveness of this technology can be evaluated through simulations using MATLAB Simulink, enabling an assessment of its potential application in the Jakarta Metro system. By quantifying this efficiency gain, informed strategic decisions can be made regarding the adoption of SiC technology for DC to AC conversion, whether through the replacement of existing IGBT-based inverters or during the procurement of rolling stock for future phases. The evaluation will be conducted by simulating both existing IGBT parameters and proposed SiC device parameters under current traction motor operating conditions. This simulation aims to determine the output power required to drive the traction motor while maintaining alignment with the current train configuration. A comparative analysis of efficiency between the two technologies will form the basis of this thesis, providing insights into the feasibility and benefits of transitioning to SiC-based inverters for the Jakarta Metro.

Multi-Parameter Detection of Bond Wire Lift-Off, Current, and Temperature in IGBT Modules via Gate Voltage Waveforms and CNNs with Digital Gate Control

2025-06-01

Thatree Mamee , Katsuhiro Hata , Makoto Takamiya +3 more | Power Electronic Devices and Components

Sputtering-Time-Dependent Optical and Microstructural Characteristics of SiC Thin Films for Optoelectronic Applications

2025-06-01

Fatemeh Soltanifar , Ehsan Ebrahimibasabi , Mohammad Mahdi Shahidi | Optical Materials