P. Dawson

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All published works
Action Title Year Authors
+ PDF Chat Polar ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>In</mml:mi></mml:math> , <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ga</mml:mi></mml:math> ) <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> / <mml:math xmlns:mml="http://www.w3.org/1998/Math/… 2020 Daniel S. P. Tanner
P. Dawson
M. J. Kappers
Rachel A. Oliver
Stefan Schulz
+ PDF Chat A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on <i>a</i>-plane and <i>m</i>-plane GaN substrates 2016 Dmytro Kundys
Danny Sutherland
Matthew Davies
Fabrice Oehler
James T. Griffiths
P. Dawson
M. J. Kappers
C. J. Humphreys
Stefan Schulz
Fengzai Tang
+ PDF Chat Structural, electronic, and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>m</mml:mi></mml:math>-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory 2015 Stefan Schulz
D. P. Tanner
Eoin P. O’Reilly
A. Miguel
T. Martin
Paul A.J. Bagot
Michael P. Moody
Fengzai Tang
James T. Griffiths
Fabrice Oehler
+ PDF Chat Carrier localization mechanisms in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N/GaN quantum wells 2011 Duncan Watson‐Parris
M. J. Godfrey
P. Dawson
Rachel A. Oliver
M. J. Galtrey
M. J. Kappers
C. J. Humphreys
+ Carrier relaxation with LO phonon decay in semiconductor quantum dots 2000 S. A. Levetas
M. J. Godfrey
P. Dawson
Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Carrier localization mechanisms in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N/GaN quantum wells 2011 Duncan Watson‐Parris
M. J. Godfrey
P. Dawson
Rachel A. Oliver
M. J. Galtrey
M. J. Kappers
C. J. Humphreys
3
+ PDF Chat Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells 2015 Stefan Schulz
A. Miguel
Conor Coughlan
Eoin P. O’Reilly
3
+ PDF Chat Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides 2013 A. Miguel
Stefan Schulz
Eoin P. O’Reilly
2
+ PDF Chat Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN 2008 Patrick Rinke
M. Winkelnkemper
A. Qteish
D. Bimberg
Jörg Neugebauer
Matthias Scheffler
2
+ PDF Chat Structural, electronic, and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>m</mml:mi></mml:math>-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory 2015 Stefan Schulz
D. P. Tanner
Eoin P. O’Reilly
A. Miguel
T. Martin
Paul A.J. Bagot
Michael P. Moody
Fengzai Tang
James T. Griffiths
Fabrice Oehler
2
+ PDF Chat Free-carrier effects in gallium nitride epilayers: Valence-band dispersion 2001 Philip A. Shields
R. J. Nicholas
F. M. Peeters
B. Beaumont
P. Gibart
1
+ PDF Chat Spontaneous polarization and piezoelectric constants of III-V nitrides 1997 Fabio Bernardini
Vincenzo Fiorentini
David Vanderbilt
1
+ PDF Chat Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors 2016 Audrius Alkauskas
Cyrus E. Dreyer
John L. Lyons
Chris G. Van de Walle
1
+ PDF Chat Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers 2017 Marco Piccardo
Chikang Li
Yuh‐Renn Wu
James S. Speck
Bastien Bonef
Robert M. Farrell
Marcel Filoche
Lucio Martinelli
Jacques Peretti
Claude Weisbuch
1
+ Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations 2017 C.M. Jones
Chu-Hsiang Teng
Qimin Yan
C. C. Kuo
Emmanouil Kioupakis
1
+ PDF Chat Interface Roughness, Carrier Localization, and Wave Function Overlap in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>c</mml:mi></mml:math> -Plane <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow… 2018 Daniel S. P. Tanner
Joshua M. McMahon
Stefan Schulz
1
+ PDF Chat Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study 2013 Stefan Schulz
A. Miguel
Lay-Theng Tan
P. J. Parbrook
Robert Martin
Eoin P. O’Reilly
1
+ PDF Chat Carrier recombination dynamics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>In</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mtext>N</mml:mtext><mml:mo>/</mml:mo><mml:mtext>GaN</mml:mtext></mml:mrow></mml:math>multiple quantum wells 2010 Colin-N. Brosseau
Mathieu Perrin
Carlos Silva
R. Leonelli
1
+ PDF Chat Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap 2019 Aurélien David
Nathan G. Young
Christophe A. Hurni
Michael D. Craven
1
+ PDF Chat Efficiency Drop in Green<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>InGaN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:mrow></mml:math>Light Emitting Diodes: The Role of Random Alloy Fluctuations 2016 Matthias Auf der Maur
Alessandro Pecchia
Gabriele Penazzi
Walter Rodrigues
Aldo Di Carlo
1
+ PDF Chat Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states 2010 Dulce C. Camacho‐Mojica
Yann-Michel Niquet
1
+ PDF Chat Effects of macroscopic polarization in III-V nitride multiple quantum wells 1999 Vincenzo Fiorentini
Fabio Bernardini
Fabio Della Sala
Aldo Di Carlo
Paolo Lugli
1
+ PDF Chat Semiempirical pseudopotential approach for nitride-based nanostructures and<i>ab initio</i>based passivation of free surfaces 2012 Alejandro Molina‐Sánchez
A. García‐Cristóbal
Gabriel Bester
1