SU\G(𝔸)/K·U

Sören Schäfer

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All published works
Action Title Year Authors
+ PDF Chat Carrier confinement in GaN/Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>N nanowire heterostructures (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>0</mml:mn><mml:mo… 2011 Florian Furtmayr
J. Teubert
Pascal Becker
Sonia Conesa‐Boj
J.R. Morante
Alexey Chernikov
Sören Schäfer
Sangam Chatterjee
Jordi Arbiol
Martin Eickhoff
Common Coauthors
Coauthor Papers Together
Martin Eickhoff 1
Jordi Arbiol 1
Sangam Chatterjee 1
Sonia Conesa‐Boj 1
Florian Furtmayr 1
J.R. Morante 1
J. Teubert 1
Pascal Becker 1
Alexey Chernikov 1
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states 2010 Dulce C. Camacho‐Mojica
Yann-Michel Niquet
 1
+ PDF Chat Growth and optical properties of GaN/AlN quantum wells 2003 Christoph Adelmann
Eirini Sarigiannidou
D. Jalabert
Yuichi Hori
Jean‐Luc Rouvière
B. Daudin
S. Fanget
C. Bru‐Chevallier
T. Shibata
Masatoshi Tanaka
 1
+ PDF Chat Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors 2003 B. Jogai
John D. Albrecht
Ernian Pan
 1
+ PDF Chat Adatom diffusion at GaN (0001) and (0001̄) surfaces 1998 Tosja Zywietz
Jörg Neugebauer
Matthias Scheffler
 1