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Francisco G. Ruiz
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All published works
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Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms
2025
Mohit D. Ganeriwala
Daniel Luque-Jarava
Francisco Pasadas
J. J. Palacios
Francisco G. Ruiz
A. Godoy
Enrique G. MarĂn
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Exploiting Ambipolarity in Graphene FieldâEffect Transistors for Novel Designs on HighâFrequency Analog Electronics
2023
Francisco Pasadas
Alberto MedinaâRull
Francisco G. Ruiz
Javier N. Ramos-Silva
AnĂbal Pacheco-SĂĄnchez
Mari Carmen Pardo
Alejandro ToralâLopez
A. Godoy
Eloy RamĂrezâGarcĂa
David Jiménez
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GrapheneâonâSilicon Hybrid FieldâEffect Transistors
2023
Mykola Fomin
Francisco Pasadas
Enrique G. MarĂn
Alberto MedinaâRull
Francisco G. Ruiz
A. Godoy
Ihor Zadorozhnyi
Guillermo Beltramo
Fabian Brings
S. Đ. Vitusevich
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Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors
2021
Tarek El-Grour
Francisco Pasadas
Alberto MedinaâRull
Montassar Najari
Enrique G. MarĂn
Alejandro ToralâLopez
Francisco G. Ruiz
A. Godoy
David Jiménez
L. El Mir
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
2021
Francisco Pasadas
Alberto MedinaâRull
Pedro C. Feijoo
AnĂbal Pacheco-SĂĄnchez
Enrique G. MarĂn
Francisco G. Ruiz
Noel RodrĂguez
A. Godoy
David Jiménez
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PDF
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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
2021
Alejandro ToralâLopez
Francisco Pasadas
Enrique G. MarĂn
Alberto MedinaâRull
Jose MarĂa GonzĂĄlez-Medina
Francisco G. Ruiz
David Jiménez
A. Godoy
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PDF
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
2020
Alberto MedinaâRull
Francisco Pasadas
Enrique G. MarĂn
Alejandro ToralâLopez
Juan Cuesta-Lopez
A. Godoy
David Jiménez
Francisco G. Ruiz
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PDF
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Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
2019
Francisco Pasadas
Enrique G. MarĂn
Alejandro ToralâLopez
Francisco G. Ruiz
A. Godoy
Saungeun Park
Deji Akinwande
David Jiménez
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PDF
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GFET Asymmetric Transfer Response Analysis through Access Region Resistances
2019
Alejandro ToralâLopez
Enrique G. MarĂn
Francisco Pasadas
Jose MarĂa GonzĂĄlez-Medina
Francisco G. Ruiz
David Jiménez
A. Godoy
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High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
2018
Sarah Riazimehr
Satender Kataria
Jose MarĂa GonzĂĄlez-Medina
Stefan Wagner
Mehrdad Shaygan
Stephan Suckow
Francisco G. Ruiz
Olof Engström
A. Godoy
Max C. Lemme
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PDF
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Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
2017
Celso Martinez-Blanque
Enrique G. MarĂn
Alejandro ToralâLopez
Jose MarĂa GonzĂĄlez-Medina
Francisco G. Ruiz
A. Godoy
F. GĂĄmiz
Common Coauthors
Coauthor
Papers Together
A. Godoy
11
Enrique G. MarĂn
10
Francisco Pasadas
9
Alejandro ToralâLopez
7
David Jiménez
7
Alberto MedinaâRull
6
Jose MarĂa GonzĂĄlez-Medina
4
AnĂbal Pacheco-SĂĄnchez
2
Fabian Brings
1
Mehrdad Shaygan
1
Guillermo Beltramo
1
F. GĂĄmiz
1
Satender Kataria
1
Stephan Suckow
1
S. Đ. Vitusevich
1
Juan Cuesta-Lopez
1
Saungeun Park
1
Pedro C. Feijoo
1
Deji Akinwande
1
Eloy RamĂrezâGarcĂa
1
J. J. Palacios
1
Montassar Najari
1
Mykola Fomin
1
Mohit D. Ganeriwala
1
L. El Mir
1
Max C. Lemme
1
Tarek El-Grour
1
Stefan Wagner
1
Andreas OffenhÀeusser
1
Sarah Riazimehr
1
Daniel Luque-Jarava
1
Noel RodrĂguez
1
Dmitry Kireev
1
Celso Martinez-Blanque
1
Ihor Zadorozhnyi
1
Javier N. Ramos-Silva
1
Mari Carmen Pardo
1
Olof Engström
1
Commonly Cited References
Action
Title
Year
Authors
# of times referenced
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PDF
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Large-Signal Model of Graphene Field-Effect TransistorsâPart I: Compact Modeling of GFET Intrinsic Capacitances
2016
Francisco Pasadas
David Jiménez
5
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PDF
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Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
2016
Pedro C. Feijoo
David Jiménez
Xavier CartoixĂ
4
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PDF
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GFET Asymmetric Transfer Response Analysis through Access Region Resistances
2019
Alejandro ToralâLopez
Enrique G. MarĂn
Francisco Pasadas
Jose MarĂa GonzĂĄlez-Medina
Francisco G. Ruiz
David Jiménez
A. Godoy
3
+
PDF
Chat
Flexible One-Dimensional MetalâInsulatorâGraphene Diode
2019
Zhenxing Wang
Burkay Uzlu
Mehrdad Shaygan
Martin Otto
MĂĄrio Ribeiro
Enrique G. MarĂn
Giuseppe Iannaccone
Gianluca Fiori
Mohamed Saeed Elsayed
Renato Negra
3
+
PDF
Chat
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
2019
Francisco Pasadas
Enrique G. MarĂn
Alejandro ToralâLopez
Francisco G. Ruiz
A. Godoy
Saungeun Park
Deji Akinwande
David Jiménez
3
+
PDF
Chat
Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances
2017
Francisco Pasadas
Wei Wei
Emiliano Pallecchi
H. Happy
David Jiménez
3
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PDF
Chat
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
2016
Saurabh V. Suryavanshi
Eric Pop
3
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PDF
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The electronic properties of graphene
2009
A. H. Castro Neto
F. Guinea
N. M. R. Peres
Kostya S. Novoselov
A. K. GeÇm
3
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Large-Signal Model of Graphene Field- Effect TransistorsâPart II: Circuit Performance Benchmarking
2016
Francisco Pasadas
David Jiménez
3
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PDF
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Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
2015
Nan Ma
Debdeep Jena
2
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Observation of electronâhole puddles in graphene using a scanning single-electron transistor
2007
Jens Martin
N. Akerman
Gerhard Ulbricht
T. Lohmann
J. H. Smet
K. von Klitzing
Amir Yacoby
2
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Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene FieldâEffect Transistors
2022
Francisco Pasadas
Pedro C. Feijoo
Nikolaos Mavredakis
AnĂbal Pacheco-SĂĄnchez
Ferney A. Chaves
David Jiménez
2
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All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts
2018
Himadri Pandey
Mehrdad Shaygan
Simon Sawallich
Satender Kataria
Zhenxing Wang
A. Noculak
Martin Otto
M. Nagel
Renato Negra
Daniel Neumaier
2
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PDF
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Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
2012
David Jiménez
2
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Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
2015
Filip Rasmussen
Kristian S. Thygesen
2
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Dependable Contact Related Parameter Extraction in GrapheneâMetal Junctions
2020
Amit Gahoi
Satender Kataria
F. Driussi
Stefano Venica
Himadri Pandey
David Esseni
L. Selmi
Max C. Lemme
2
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Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors
2020
AnĂbal Pacheco-SĂĄnchez
Nikolaos Mavredakis
Pedro C. Feijoo
Wei Wei
Emiliano Pallecchi
H. Happy
David Jiménez
2
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A Graphene Field-Effect Device
2007
Max C. Lemme
T. J. Echtermeyer
M. Baus
H. Kurz
2
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PDF
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<b>k</b> · <b>p</b> theory for two-dimensional transition metal dichalcogenide semiconductors
2015
Andor KormĂĄnyos
Guido Burkard
Martin Gmitra
Jaroslav Fabian
Viktor ZĂłlyomi
N. D. Drummond
Vladimir I. Falâko
2
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Contact resistance and mobility in back-gate graphene transistors
2020
Francesca Urban
Grzegorz Ćupina
Alessandro Grillo
Nadia Martucciello
Antonio Di Bartolomeo
2
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The role of contact resistance in graphene field-effect devices
2017
Filippo Giubileo
Antonio Di Bartolomeo
2
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
2021
Francisco Pasadas
Alberto MedinaâRull
Pedro C. Feijoo
AnĂbal Pacheco-SĂĄnchez
Enrique G. MarĂn
Francisco G. Ruiz
Noel RodrĂguez
A. Godoy
David Jiménez
2
+
PDF
Chat
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
2016
Antonio Di Bartolomeo
Filippo Giubileo
Giuseppe Luongo
Laura Iemmo
Nadia Martucciello
Gang Niu
Mirko Fraschke
Oliver Skibitzki
Thomas Schroeder
Grzegorz Ćupina
1
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Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
2017
Pedro C. Feijoo
Francisco Pasadas
José M Iglesias
MarĂa J. MartĂn
RaĂșl Rengel
Changfeng Li
Wonjae Kim
Juha Riikonen
Harri Lipsanen
David Jiménez
1
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Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
2017
Li Tao
Zefeng Chen
Xinming Li
Keyou Yan
Jianbin Xu
1
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Towards substrate engineering of grapheneâsilicon Schottky diode photodetectors
2018
Hakan Selvi
Nawapong Unsuree
E. J. W. Whittaker
Matthew P. Halsall
E.W. Hill
Andrew G. Thomas
Patrick Parkinson
T. J. Echtermeyer
1
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GrapheneâSilicon Schottky Diodes for Photodetection
2018
Antonio Di Bartolomeo
Giuseppe Luongo
Laura Iemmo
Francesca Urban
Filippo Giubileo
1
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Dielectric Properties and Ion Transport in Layered MoS<sub>2</sub> Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics
2018
Melkamu Belete
Satender Kataria
Ulrike Koch
Maximilian Kruth
Carsten Engelhard
Joachim Mayer
Olof Engström
Max C. Lemme
1
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Quantum capacitance-limited MoS<sub>2</sub>biosensors enable remote label-free enzyme measurements
2019
Son T. Le
Nicholas B. Guros
Robert Bruce
Antonio Cardone
Niranjana D. Amin
Siyuan Zhang
Jeffery B. Klauda
Harish C. Pant
Curt A. Richter
Arvind Balijepalli
1
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Contact resistance and mobility in back-gate graphene transistors
2020
Francesca Urban
Grzegorz Ćupina
Alessandro Grillo
Nadia Martucciello
Antonio Di Bartolomeo
1
+
PDF
Chat
Contact resistance extraction of graphene FET technologies based on individual device characterization
2020
AnĂbal Pacheco-SĂĄnchez
Pedro C. Feijoo
David Jiménez
1
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PDF
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Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
2017
Antonio Di Bartolomeo
Giuseppe Luongo
Filippo Giubileo
N. Funicello
Gang Niu
Thomas Schroeder
Marco Lisker
Grzegorz Ćupina
1
+
PDF
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
2020
Alberto MedinaâRull
Francisco Pasadas
Enrique G. MarĂn
Alejandro ToralâLopez
Juan Cuesta-Lopez
A. Godoy
David Jiménez
Francisco G. Ruiz
1
+
PDF
Chat
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics
2015
Antonio Di Bartolomeo
Filippo Giubileo
Francesco Romeo
P. Sabatino
G. Carapella
Laura Iemmo
Thomas Schroeder
Grzegorz Ćupina
1
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Ultralow Specific Contact Resistivity in MetalâGraphene Junctions via Contact Engineering
2018
Vikram Passi
Amit Gahoi
Enrique G. MarĂn
Teresa Cusati
Alessandro Fortunelli
Giuseppe Iannaccone
Gianluca Fiori
Max C. Lemme
1
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High Photocurrent in Gated GrapheneâSilicon Hybrid Photodiodes
2017
Sarah Riazimehr
Satender Kataria
Rainer Bornemann
P. Haring BolĂvar
Francisco Javier GarcĂa Ruiz
Olof Engström
A. Godoy
Max C. Lemme
1
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Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
2017
Damiano Marian
Elias Dib
Teresa Cusati
Enrique G. MarĂn
Alessandro Fortunelli
Giuseppe Iannaccone
Gianluca Fiori
1
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Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz
2009
Yu-Ming Lin
HsinâYing Chiu
K.A. Jenkins
Damon B. Farmer
Phaedon Avouris
Alberto ValdesâGarcia
1
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Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors
2013
Zelei Guo
Rui Dong
Partha Sarathi Chakraborty
Nelson E. Lourenco
James Palmer
Yike Hu
Ming Ruan
John Hankinson
Jan Kunc
John D. Cressler
1
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Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors
2011
David Jiménez
1
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High performance metalâinsulatorâgraphene diodes for radio frequency power detection application
2017
Mehrdad Shaygan
Zhenxing Wang
Mohamed Saeed Elsayed
Martin Otto
Giuseppe Iannaccone
Ahmed Hamed Ghareeb
Gianluca Fiori
Renato Negra
Daniel Neumaier
1
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Hysteresis in the transfer characteristics of MoS <sub>2</sub> transistors
2017
Antonio Di Bartolomeo
Luca Genovese
Filippo Giubileo
Laura Iemmo
Giuseppe Luongo
Tobias Foller
Marika Schleberger
1
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Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors
2019
Pedro C. Feijoo
Francisco Pasadas
José M Iglesias
El Mokhtar Hamham
RaĂșl Rengel
David Jiménez
1
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A physically based compact<i>I</i>â<i>V</i>model for monolayer TMDC channel MOSFET and DMFET biosensor
2018
Ehsanur Rahman
Abir Shadman
Imtiaz Ahmed
Saeed Uz Zaman Khan
Quazi D. M. Khosru
1
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Isotropic conduction and negative photoconduction in ultrathin PtSe2 films
2020
Francesca Urban
Farzan Gity
Paul K. Hurley
Niall McEvoy
Antonio Di Bartolomeo
1
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PressureâTunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors
2019
Antonio Di Bartolomeo
Aniello Pelella
Xiaowei Liu
Feng Miao
M. Passacantando
Filippo Giubileo
Alessandro Grillo
Laura Iemmo
Francesca Urban
ShiâJun Liang
1
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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
2011
Alexander S. Mayorov
Đ . Đ. ĐĐŸŃбаŃĐ”ĐČ
ĐĄ. Đ. ĐĐŸŃĐŸĐ·ĐŸĐČ
L. Britnell
R. Jalil
Đ. Đ. ĐĐŸĐœĐŸĐŒĐ°ŃĐ”ĐœĐșĐŸ
Peter Blake
Kostya S. Novoselov
Kenji Watanabe
Takashi Taniguchi
1
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High Efficiency Graphene Solar Cells by Chemical Doping
2012
Xiaochang Miao
Sefaattin Tongay
M. Petterson
Kara Berke
Andrew G. Rinzler
Bill R. Appleton
A. F. Hebard
1
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Multifunctional High-Frequency Circuit Capabilities of Ambipolar Carbon Nanotube FETs
2021
Javier N. Ramos-Silva
AnĂbal Pacheco-SĂĄnchez
Eloy RamĂrezâGarcĂa
David Jiménez
1
+
PDF
Chat
Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors
2021
Tarek El-Grour
Francisco Pasadas
Alberto MedinaâRull
Montassar Najari
Enrique G. MarĂn
Alejandro ToralâLopez
Francisco G. Ruiz
A. Godoy
David Jiménez
L. El Mir
1