Chiara Sinito

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All published works

Action	Title	Year	Authors
+ PDF Chat	Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy	2022	Thomas Auzelle Chiara Sinito Jonas Lähnemann Guanhui Gao Timur Flissikowski A. Trampert Sergio Fernández‐Garrido O. Brandt
+	Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantums wells grown by molecular beam epitaxy.	2021	Thomas Auzelle Chiara Sinito Jonas Lähnemann Guanhui Gao Timur Flissikowski A. Trampert O. Brandt Sergio Fernández‐Garrido
+ PDF Chat	External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers	2021	Thomas Auzelle Florian Ullrich Sebastian Hietzschold Chiara Sinito Stefan Brackmann Wolfgang Kowalsky Eric Mankel O. Brandt Robert Lovrinčić Sergio Fernández‐Garrido
+ PDF Chat	Radius-dependent homogeneous strain in uncoalesced GaN nanowires	2020	Gabriele Calabrese David van Treeck Vladimir M. Kaganer Oleg Konovalov Pierre Corfdir Chiara Sinito Lutz Geelhaar O. Brandt Sergio Fernández‐Garrido
+	Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires	2020	Gabriele Calabrese David van Treeck Vladimir M. Kaganer Oleg Konovalov Pierre Corfdir Chiara Sinito Lutz Geelhaar O. Brandt Sergio Fernández‐Garrido
+ PDF Chat	Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy	2019	Chiara Sinito Pierre Corfdir Carsten Pfüller Guanhui Gao J. Bartolomé Sebastian Kölling A. Rodil Doblado U. Jahn Jonas Lähnemann Thomas Auzelle

Common Coauthors

Coauthor	Papers Together
Sergio Fernández‐Garrido	6
O. Brandt	6
Thomas Auzelle	4
Jonas Lähnemann	3
Pierre Corfdir	3
Guanhui Gao	3
Timur Flissikowski	3
Lutz Geelhaar	3
Oleg Konovalov	2
A. Trampert	2
Gabriele Calabrese	2
Vladimir M. Kaganer	2
David van Treeck	2
Sebastian Kölling	1
Carsten Pfüller	1
Wolfgang Kowalsky	1
Johannes K. Zettler	1
U. Jahn	1
P. M. Koenraad	1
Stefan Brackmann	1
Eric Mankel	1
H. T. Grahn	1
J. Bartolomé	1
Robert Lovrinčić	1
Sebastian Hietzschold	1
A. Rodil Doblado	1
Florian Ullrich	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)	2016	Carsten Pfüller Pierre Corfdir Christian Hauswald Timur Flissikowski Xiang Kong Johannes K. Zettler Sergio Fernández‐Garrido P. Dogan H. T. Grahn A. Trampert	3
+ PDF Chat	Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires	2014	O. Brandt Sergio Fernández‐Garrido Johannes K. Zettler Esperanza Luna U. Jahn Caroline Chèze Vladimir M. Kaganer	3
+ PDF Chat	Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors	2014	Pierre Corfdir Johannes K. Zettler Christian Hauswald Sergio Fernández‐Garrido O. Brandt Pierre Lefèbvre	3
+ PDF Chat	High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers	2021	Reet Chaudhuri Zhen Chen David A. Muller Huili Grace Xing Debdeep Jena	2
+ PDF Chat	Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence	2014	Sergio Fernández‐Garrido Vladimir M. Kaganer Christian Hauswald B. Jenichen M. Ramsteiner Vincent Consonni Lutz Geelhaar O. Brandt	2
+ PDF Chat	Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency	2014	Pierre Corfdir Christian Hauswald Johannes K. Zettler Timur Flissikowski Jonas Lähnemann Sergio Fernández‐Garrido Lutz Geelhaar H. T. Grahn O. Brandt	2
+ PDF Chat	Macro- and micro-strain in GaN nanowires on Si(111)	2011	B. Jenichen O. Brandt Carsten Pfüller P. Dogan M. Knelangen A. Trampert	2
+ PDF Chat	Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature	2015	Johannes K. Zettler Pierre Corfdir Christian Hauswald E. Luna U. Jahn Timur Flissikowski E. Schmidt Carsten Ronning A. Trampert Lutz Geelhaar	2
+ PDF Chat	Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles	2015	Sergio Fernández‐Garrido Johannes K. Zettler Lutz Geelhaar O. Brandt	2
+ PDF Chat	High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN	2015	Johannes K. Zettler Christian Hauswald Pierre Corfdir Mattia Musolino Lutz Geelhaar Henning Riechert O. Brandt Sergio Fernández‐Garrido	2
+ PDF Chat	Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides	2016	Cyrus E. Dreyer Anderson Janotti Chris G. Van de Walle David Vanderbilt	2
+ PDF Chat	Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films	2017	David van Treeck Gabriele Calabrese Jelle J. W. Goertz Vladimir M. Kaganer O. Brandt Sergio Fernández‐Garrido Lutz Geelhaar	2
+ PDF Chat	Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study	2016	Vladimir M. Kaganer B. Jenichen O. Brandt	2
+ PDF Chat	Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C	2018	Caroline Chèze Felix Feix Jonas Lähnemann Timur Flissikowski M. Kryśko P. Wolny Henryk Turski C. Skierbiszewski O. Brandt	2
+ PDF Chat	An improved reconstruction procedure for the correction of local magnification effects in three‐dimensional atom‐probe	2007	Frédéric De Geuser Williams Lefebvre F. Danoix F. Vurpillot Børge Forbord D. Blavette	1
+ PDF Chat	Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires	2015	Avinash Patsha Prasana Sahoo S. Amirthapandian Arun K. Prasad Arindam Das A.K. Tyagi M. A. Cotta Sandip Dhara	1
+ PDF Chat	Strain evolution in GaN nanowires: From free-surface objects to coalesced templates	2013	Maxime Hugues Philip A. Shields F. Sacconi M. Mexis Matthias Auf der Maur Mike Cooke Mark Dineen Aldo Di Carlo D.W.E. Allsopp J. Zúñiga‐Pérez	1
+ PDF Chat	Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil	2016	Gabriele Calabrese Pierre Corfdir Guanhui Gao Carsten Pfüller A. Trampert O. Brandt Lutz Geelhaar Sergio Fernández‐Garrido	1
+ PDF Chat	Origin of the ‘S-shaped’ temperature dependence of luminescent peaks from semiconductors	2005	Q Li Shijie Xu M. H. Xie S. Y. Tong	1
+ PDF Chat	Polarity-Induced Selective Area Epitaxy of GaN Nanowires	2016	Ziani de Souza Schiaber Gabriele Calabrese Xiang Kong A. Trampert B. Jenichen José Humberto Dias da Silva Lutz Geelhaar O. Brandt Sergio Fernández‐Garrido	1
+ PDF Chat	Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene	2017	Sergio Fernández‐Garrido M. Ramsteiner Guanhui Gao Lauren A. Galves Bharat Bhushan Sharma Pierre Corfdir Gabriele Calabrese Ziani de Souza Schiaber Carsten Pfüller A. Trampert	1
+ PDF Chat	Comparison of the Luminous Efficiencies of Ga- and N-Polar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mo stretchy="false">/</mml:mo><mml:msub><mml:mrow><mml:mi>In</mml:mi></mml:…	2016	Sergio Fernández‐Garrido Jonas Lähnemann Christian Hauswald M. Korytov M. Albrecht Caroline Chèze C. Skierbiszewski O. Brandt	1
+ PDF Chat	Radius-dependent homogeneous strain in uncoalesced GaN nanowires	2020	Gabriele Calabrese David van Treeck Vladimir M. Kaganer Oleg Konovalov Pierre Corfdir Chiara Sinito Lutz Geelhaar O. Brandt Sergio Fernández‐Garrido	1
+ PDF Chat	Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process	2015	Johannes K. Zettler Pierre Corfdir Lutz Geelhaar H. Riechert O. Brandt Sergio Fernández‐Garrido	1
+ PDF Chat	Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN	2015	Adil Sarwar Santino D. Carnevale Thomas F. Kent Fan Yang David W. McComb Roberto C. Myers	1
+ PDF Chat	Lattice expansion and noncollinear to collinear ferrimagnetic order in a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant="normal">Cr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>nanoparticle	2006	R.N. Bhowmik R. Ranganathan R. Nagarajan	1
+	Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields	2020	Thomas Auzelle Mani Azadmand Timur Flissikowski M. Ramsteiner K. Morgenroth C. Stemmler Sergio Fernández‐Garrido S. Sanguinetti H. T. Grahn Lutz Geelhaar	1
+ PDF Chat	Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors	2015	M. C. E. Huber Marco Silvestri L. Knuuttila Gianmauro Pozzovivo Andrei Andreev A. Kadashchuk A. Bonanni Anders Lundskog	1
+ PDF Chat	Origin of the nonradiative decay of bound excitons in GaN nanowires	2014	Christian Hauswald Pierre Corfdir Johannes K. Zettler Vladimir M. Kaganer Karl K. Sabelfeld Sergio Fernández‐Garrido Timur Flissikowski Vincent Consonni Tobias Gotschke H. T. Grahn	1
+ PDF Chat	Radial Stark Effect in (In,Ga)N Nanowires	2016	Jonas Lähnemann Pierre Corfdir Felix Feix Jumpei Kamimura Timur Flissikowski H. T. Grahn Lutz Geelhaar O. Brandt	1
+ PDF Chat	Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys	2002	Debdeep Jena S. Heikman Daniel Green D. Buttari R. Coffie Huili Grace Xing S. Keller Steven P. DenBaars James S. Speck Umesh K. Mishra	1
+ PDF Chat	Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity	2012	Sergio Fernández‐Garrido Xiang Kong Tobias Gotschke Raffaella Calarco Lutz Geelhaar A. Trampert O. Brandt	1